In an embodiment a housing includes a first leadframe part and a second leadframe part and a housing body mechanically connecting the first and second leadframe parts to one another, wherein each first and second leadframe part has a mounting area on an inner side and each has an outer side opposite the inner side, wherein the first leadframe part has at least one solder control point and the second leadframe part has at least two solder control points, wherein each solder control point is formed as a recess at an associated outer side and is accessible from an outer side wall of the housing, and wherein the solder control points of the second leadframe part and the at least one solder control point of the first leadframe part are located on mutually opposite outer side walls of the housing body and are arranged completely offset relative to one another so that the solder control points are free of an overlap in a direction parallel to a main axis.

According to one embodiment, a semiconductor device includes first and second frames, a first semiconductor chip, a wire, and a resin. The second frame is arranged so as to face the first frame in a first direction, and has a stepped portion on an end portion of an upper surface. The first semiconductor chip is arranged on a bottom surface of the stepped portion. The wire electrically couples the first semiconductor chip and the first frame. The resin covers part of each of the first and second frames and seals the first semiconductor chip and the wire. A lower surface of the first frame and a side surface of the first frame in the first direction are exposed from the resin. A lower surface of the second frame and a side surface of the second frame in the first direction are exposed from the resin.

A semiconductor package includes a metallic substrate, the metallic substrate including a roughened surface, a semiconductor die including bond pads, and an adhesive between the roughened surface of a topside of the metallic substrate and the semiconductor die, therein bonding the semiconductor die to the metallic substrate. The adhesive includes a resin. The metallic substrate further includes a groove about a perimeter of the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic substrate. The groove straddles the topside and a sidewall of the metallic substrate.

A semiconductor package includes a connection structure having first and second surfaces opposing each other and including a first redistribution layer; a semiconductor chip disposed on the first surface of the connection structure and including connection pads connected to the first redistribution layer; an encapsulant disposed on the first surface of the connection structure and encapsulating the semiconductor chip; and a second redistribution layer disposed on the encapsulant; a wiring structure connecting the first and second redistribution layers to each other and extending in a stacking direction; and a heat dissipation element disposed on at least a portion of the second surface of the connection structure.

A first chip mounting portion and a third chip mounting portion are electrically connected to each other via a first resistor element, and a second chip mounting portion and the third chip mounting portion are electrically connected to each other via a second resistor element.

A semiconductor device includes: a semiconductor element; an island lead on which the semiconductor element is mounted; a terminal lead electrically connected to the semiconductor element; a wire connected to the semiconductor element and the terminal lead; and a sealing resin covering the semiconductor element, the island lead, the terminal lead, and the wire. The terminal lead includes a base member having an obverse surface facing in a thickness direction of the terminal lead, and a metal layer located between the obverse surface and the wire. The base member has a greater bonding strength with respect to the sealing resin than the metal layer. The obverse surface includes an opposing side facing the island lead. The obverse surface includes a first portion that includes at least a portion of the opposing side and that is exposed from the metal layer.

In examples, a semiconductor package includes a semiconductor die having a device side in which circuitry is formed and a non-device side opposite the device side. The package includes a die attach film contacting the non-device side of the semiconductor die; a first conductive terminal contacting the die attach film, the semiconductor die cantilevered by the first conductive terminal; a second conductive terminal separated from the die attach film, the first and second conductive terminals configured to operate in different voltage domains; bond wires coupling the device side of the semiconductor die to the first and second conductive terminals; and a mold compound contacting the semiconductor die, the die attach film, the first and second conductive terminals, and the bond wires, the mold compound present in between the die attach film and the second conductive terminal, each of the first and second conductive terminals exposed from at least one lateral surface of the mold compound.

A lead frame, an SSD module, and an SSD device. The lead frame includes: a first base island, configured to mount a storage control chip; a second base island, configured to mount a Flash; and a pin array, distributed around a periphery of the first base island.

A die of the package device is covered by an encapsulation layer, a plurality of lead portions are configured on the bottom surface of the encapsulation layer, a side portion of each lead portion is also exposed on a side surface of the encapsulation layer, and thereby the package device is used as a side-wettable package device; wherein, in a process of manufacturing the package device, a conductive electroplated conducting layer is formed on the surface of the encapsulation layer, and the electroplated conducting layer is used to conduct electric power required during an electroplating process. After the electroplating process is completed, the electroplated conducting layer can be used as a heat dissipation layer for the package device. The heat dissipation layer completely covers the surface of the package device so as to increase heat dissipation area and to be attached by a heat sink.

A chip on film package may include: a substrate; a semiconductor chip on the substrate; first wires extending, on the substrate, to an edge of a first side of the substrate from a portion of the first wires overlapping with an edge of a first side of the semiconductor chip; second wires extending, on the substrate, to an edge of a second side of the substrate from a portion of the second wires overlapping with an edge of a second side of the semiconductor chip; first bumps connecting the first wires and the semiconductor chip; first dummy patterns spaced apart from at least some of the first bumps, the first dummy patterns being nearer than the first bumps to a center portion of the semiconductor chip, wherein the first dummy patterns are respectively spaced apart from first internal bumps, among the first bumps, in a second direction.