An apparatus for manufacturing a display apparatus includes a substrate. A mask assembly includes an opening, a mask frame surrounding the opening, and at least one mask coupled to the mask frame. An electrostatic chuck is configured to attach the substrate to the at least one mask. A first driver is configured to drive the electrostatic chuck. At least a partial portion of the mask frame does not overlap the electrostatic chuck in a thickness direction of the substrate.

Provided are nitride atomic layer etch including in situ generating a phosphoric acid on the surface of silicon nitride layer by reacting a phosphorus containing reactant with one or more oxidants. Phosphoric acid selectively etches silicon nitride layer over silicon oxide and/or silicon.

A member used in a semiconductor manufacturing apparatus includes a first member, a second member, and a sealing layer disposed between the first member and the second member. The first member has a plurality of first openings, and the second member has a plurality of second openings respectively corresponding to the plurality of first openings. The sealing layer has a plurality of through holes respectively corresponding to at least two first openings among the plurality of first openings. The at least two first openings respectively communicate with at least two corresponding second openings via the plurality of through holes.

A measurement apparatus includes a measurement unit and a controller. The measurement unit is able to measure force needed to shift a substrate on a substrate adsorption unit that is able to adsorb the substrate, in an adsorbed state in which the substrate is adsorbed by the substrate adsorption unit. The controller calculates adsorption force of the substrate adsorption unit based on the force measured by the measurement unit.

A method including using a plurality of clamp electrodes of a substrate support to electrostatically secure a substrate during a process. The method further includes actively discharging a residual charge from the substrate after completion of the process based on at least one of contacting a backside of the substrate with a conductive lift pin or exposing the substrate to ultraviolet light. The method further includes raising a plurality of lift pins disposed in the substrate support to a first height to lift the substrate off of the substrate support after the discharging of the residual charge.

Embodiments of the present disclosure herein include an apparatus for processing a substrate. More specifically, embodiments of this disclosure provide a substrate support assembly that includes an electrostatic chuck (ESC) assembly. The ESC assembly comprises a cooling base having a top surface and an outer diameter sidewall, an ESC having a substrate support surface, a bottom surface and an outer diameter sidewall, the bottom surface of the ESC coupled to the top surface of the cooling base by an adhesive layer. The substrate support assembly includes a blocking ring disposed around the outer diameter sidewalls of the cooling base and ESC, the blocking ring shielding an interface between the bottom surface of the ESC and the top surface of the cooling base.

An embodiment of an apparatus may include a chuck body, and a surface formed on the chuck body to hold a wafer, where the surface has a non-flat shape. Other embodiments are disclosed and claimed.

A member for semiconductor manufacturing apparatus includes: a ceramic plate that has an upper surface including a wafer placement surface; a conductive base that is disposed on a lower surface of the ceramic plate; a first hole that extends through the ceramic plate; a second hole that extends through the conductive base; a porous plug that has an upper surface that is exposed from an upper opening of the first hole and a lower surface that is flush with or below an upper surface of the conductive base; an insulating pipe that has an upper surface that is located below the wafer placement surface and a lower surface that is located below the lower surface of the porous plug; and an integrally formed member that is obtained by integrally forming the porous plug and the insulating pipe.

An electrostatic chuck includes a ceramic top plate layer made of a beryllium oxide material, a ceramic bottom plate layer made of a beryllium oxide material, a ceramic middle plate layer disposed between the ceramic top plate layer and the ceramic bottom plate layer, an electrode layer disposed between the ceramic top plate layer and the ceramic middle plate layer, and a heater layer disposed between the ceramic middle plate layer and the ceramic bottom plate layer. The electrode layer joins and hermetically seals the ceramic top plate layer to the ceramic middle plate layer, and the heater layer joins and hermetically seals the ceramic middle plate layer to the ceramic bottom plate layer.

A semiconductor device manufacturing method includes: forming an organic film composed of a polymer having a urea bond in a recess by supplying amine and isocyanate to a surface of a substrate having the recess; performing a predetermined process on the substrate on which the organic film is formed in the recess; and removing the organic film in the recess by heating the substrate that has been subjected to the predetermined process to depolymerize the organic film. The amine and the isocyanate have a terminal bifunctional linear chain structure having two functional groups at both ends of a linear chain. At least one of the amine or the isocyanate has side chains connected to the linear chain contained in the linear chain structure.