An electrostatic discharge (ESD) mitigating article for storing a semiconductor device or for transporting a process fluid during semiconductor manufacturing is provided. The article includes a conductive polymer that comprises conjugated segments of arylene or heteroaryl groups connected to each other via an optional vinylene group, ethynylene group or a divalent linker comprising a carbon, nitrogen, oxygen, sulfur, selenium, or silicon atom in the polymer backbone.

A modular multi-pipe pressure regulator for semiconductor manufacturing machines includes 210 pump drive connectors, 210 switches, 210 pressure detectors, 210 rotation speed regulators, 210 alarms and a controller. Each pressure detector is installed in a pipeline of a semiconductor manufacturing machine for detecting the pipeline to feed back a pressure value. The controller has an intelligent computing model. When receiving external power drive, the controller independently controls each switch and lets the pump drive connectors and the rotation speed regulators drive and operate the suction pump and monitor its suction pump to obtain multiple time point rotational speeds after the switch is turned on. The controller detects each pressure value according to a set value and drives the rotation speed regulator to regulate the rotation speed of the suction pump, in order to maintain the pressure value of the pipeline within a tolerance range of the set value.

A substrate processing apparatus includes an electrostatic charging unit and a processing unit. The electrostatic charging unit includes an electrostatic charger positively charging a first main surface of a substrate. The processing unit includes a processing chamber, and performs a process which includes at least one of heating of the substrate in the processing chamber and supply of a processing gas to the substrate and which involves the generation of metal ions in the processing chamber.

An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.

A substrate processing system (10) includes a substrate processing apparatus (1) that supplies a processing fluid to substrates, a supplier (200) that guides a processing fluid to the substrate processing apparatus (1), and a heat collector (40) that collects heat from a drain liquid discharged from the substrate processing apparatus (1). The supplier (200) includes a heat controller (20) that controls the temperature of a processing fluid while circulating the processing fluid in the circulation passage (201), a supply passage (21) that guides a processing fluid from the heat controller (20) to the substrate processing apparatus (1), and a replenishment passage (22) that replenishes the heat controller (20) with a processing fluid. The heat collector (40) includes a heat pump (41) that collects heat from a drain liquid and gives heat to a processing fluid flowing in the replenishment passage (22).

A substrate processing apparatus has an outside flow straightening member and an inside flow straightening member. The outside flow straightening member straightens a gas passing between an upper sealing member and a lower sealing member so as to form an air curtain.

When formation of an atmosphere separated space is released, the inside flow straightening member moves up and down integrally with the lower sealing member while the outside flow straightening member is attached to the upper sealing member and is maintained at a fixed position. This generates a differential pressure between an exit side of the outside flow straightening member and an exit side of the inside flow straightening member to increase the flow rate of the gas to flow downward from the outside flow straightening member along the outer side surface of the lower sealing member. Thus, the air curtains are reinforced.

A lithography includes a storage tank that stores process chemical fluid, an anti-collision frame, and an integrated sensor assembly. The storage tank includes a dispensing port positioned at a lowest part of the storage tank in a gravity direction. The anti-collision frame is coupled to the storage tank. An integrated sensor assembly is disposed on at least one of the anti-collision frame and the storage tank to measure a variation in fluid quality in response to fluid quality measurement of fluid.

A substrate processing apparatus includes a chamber, a substrate holder, an illuminator, a polarizing filter, a filter driver, a camera, and a controller. The illuminator irradiates an imaging region including a monitoring target in the chamber with illumination light. The filter driver rotates the polarizing filter to a rotation position corresponding to the monitoring target in the imaging region to reduce the unnecessary reflected light corresponding to the monitoring target using the polarizing filter. The camera captures an image of the imaging region through the polarizing filter to generate captured image data. The controller controls the filter driver, and monitors the monitoring target based on the captured image data generated by the camera.

According to one embodiment, there is provided a semiconductor manufacturing tool that is capable of further facilitating an electrochemical process. The semiconductor manufacturing tool according to the embodiment includes a plurality of process baths, an anode and a cathode, and an electrical circuit. Each of the plurality of process baths is capable of containing a substrate processing liquid and a first substrate. The anode and the cathode are provided for each of the process baths. The electrical circuit electrically connects a plurality of first substrates held in the substrate processing liquid via the anode and the cathode and supplies electrical power via the anode and the cathode for subjecting the plurality of first substrates to an electrochemical process.

A substrate processing apparatus includes a front block, a cabinet portion, and a rear block. The front block includes a chamber. The rear block includes a chamber. The cabinet portion includes a processing liquid container, a pipe, and a liquid feeder. The processing liquid container stores a processing liquid. The pipe connects the processing liquid container and the chamber of the front block. The liquid feeder is provided on the pipe. The front block, the cabinet portion, and the rear block are arranged in this order in a front-rear direction.