A substrate processing method includes forming a sealed space housing a substrate held by a substrate holder between a shielding member and the substrate holder by sealing a gap between the shielding member and the substrate holder in a state in which a component liquid is present on an upper surface of the substrate, and increasing gas pressure in the sealed space to a value higher than gas pressure outside the sealed space by supplying a component gas that generates a processing liquid together with the component liquid to the sealed space in a state in which the component liquid is present on the upper surface of the substrate.

A wafer cleaning system including a stage, a defect inspection module and a defect remover is provided. The stage is configured to support a wafer. The defect inspection module is located above the stage and configured to detect a location of at least one defect on a surface of the wafer. The defect remover is located above the stage and configured to remove the at least one defect on the surface of the wafer according to the location of the at least one defect. In addition, a wafer detecting module and a wafer cleaning method are also provided.

Provided is an apparatus for processing a substrate, the apparatus including: a liquid treating chamber for liquid-treating a substrate; and a liquid supply unit for supplying a treatment liquid to the liquid treating chamber. The liquid supply unit includes: a supply tank for storing the treatment liquid therein; a circulation line connected to the supply tank to circulate the treatment liquid; and a liquid supply line having an opening/closing valve installed and branching from the circulation line to supply the treatment liquid to the liquid treating chamber. The supply tank is provided with a first stirrer that configured to apply flow pressure to the treatment liquid in the supply tank.

Disclosed is a method of processing a substrate, the method including: processing a substrate by supplying a treatment liquid to the substrate through a liquid supply line in which an opening/closing valve and a suck-back valve are installed; closing the opening/closing valve based on a first opening/closing profile; and performing a suck-back operation based on a first suck-back profile, in which the first opening/closing profile includes information on a closing slope, which is a slope of a pneumatic pressure applied to the opening/closing valve over time, the first suck-back profile includes information on a suck-back slope, which is a slope of a pneumatic pressure applied to the suck-back valve over time, and the first suck-back profile includes a plurality of different suck-back slopes.

Provided is a method of processing a substrate. The method includes: a liquid treating operation of supplying a treatment liquid to the substrate; a drying operation of removing the treatment liquid supplied in the liquid treating operation from the substrate; and a line width correcting operation of correcting a line width of a pattern formed on the substrate in the liquid treating operation, in which the line width correcting operation includes correcting the line width of the pattern by supplying the treatment liquid to a treatment space in which the substrate is provided, but controlling a pressure of the treatment space to a pressure capable of maintaining the treatment fluid in a supercritical or subcritical state.

A substrate processing apparatus includes a unit block including multiple liquid film forming devices each configured to form a liquid film on a top surface of a substrate, and a drying device configured to replace the liquid film with a supercritical fluid to dry the substrate; and a transfer block provided between the multiple liquid film forming devices and the drying device. The transfer block includes a transfer device configured to transfer the substrate between the multiple liquid film forming devices and the drying device, and a length of a transfer path of the substrate is equal between each of the multiple liquid film forming devices and the drying device.

A substrate processing apparatus includes a substrate stage configured to support and rotate a substrate, a dispenser configured to eject a solution toward an edge of the substrate, and a heater configured to heat at least part of the edge of the substrate, wherein the dispenser and the heater are synchronized with an encoder signal of the substrate stage.