Thermocompression bonding head fixture designs and techniques for use thereof are provided. In one aspect, an exemplary bonding head fixture includes: a workpiece contact surface; at least one recess in the workpiece contact surface; and heat passages leading into and out of the at least one recess. In another aspect, an exemplary bonding head includes: a bonding head fixture having a workpiece contact surface, at least one recess in the workpiece contact surface, and heat passages leading into and out of the at least one recess; and a heat source connected to at least one of the heat passages. Methods for use of the present bonding head fixtures are also provided.

A microelectronic assembly and a method of forming same. The assembly includes: first and second microelectronic structures; and an interface layer between the two microelectronic structures including dielectric portions in registration with dielectric layers of each of the microelectronic structures, and electrically conductive portions in registration with electrically conductive structures of each of the microelectronic structures, wherein the dielectric portions include an oxide of a metal, and the electrically conductive portions include the metal.

A semiconductor package includes a first semiconductor chip including a first substrate, a plurality of first pads disposed on a front surface of the first substrate, a first insulating layer surrounding the plurality of first pads, and a plurality of wiring patterns disposed between the first substrate and the plurality of first pads and electrically connected to the plurality of first pads; and a second semiconductor chip disposed below the first semiconductor chip and including a second substrate, a plurality of second pads disposed on the second substrate and contacting the plurality of first pads, a second insulating layer surrounding the plurality of second pads and contacting the first insulating layer, and a plurality of through-electrodes penetrating through the second substrate to be connected to the plurality of second pads. The plurality of wiring patterns include top wiring patterns adjacent to the plurality of first pads in a direction perpendicular to the front surface. On a plane parallel to the front surface, within a first region having a first shape and first region area from a top down view, first top wiring patterns have a first occupied area between adjacent first pads of a first group of first pads from among the plurality of first pads, and within a second region having the first shape and first region area from a top down view, second top wiring patterns have a second occupied area, larger than the first occupied area, between adjacent first pads of a second group of first pads from among the plurality of first pads. From a top down view, each pad of the first group of first pads has a first area, and each pad of the second group of first pads has a second area, wherein the first area is smaller than a second area.

A connection structural body includes: a first connection terminal including a first opposing surface; a first roughened-surface copper metal film formed on the first opposing surface; a second connection terminal including a second opposing surface facing the first opposing surface; and a second roughened-surface copper metal film formed on the second opposing surface and bonded to the first roughened-surface copper metal film. The first roughened-surface copper metal film includes a structure in which first deposits of copper are piled over one another on the first opposing surface. The second roughened-surface copper metal film includes a structure in which second deposits of copper are piled over one another on the second opposing surface. A bonded portion of the first and second roughened-surface copper metal films includes a structure in which the first deposits and the second deposits are piled such that the bonded portion includes pores.

A semiconductor chip includes a semiconductor substrate, a plurality of first wirings extending in a first direction parallel to the upper surface of the semiconductor substrate and disposed entirely above the upper surface of the semiconductor substrate, a second wiring disposed between two of the first wirings that are adjacent to each other and entirely below the upper surface of the semiconductor substrate such that an upper surface of the second wiring is below a lower surface of the two first wirings, and a first insulating film provided on the second wiring and spaced apart from the two first wirings in a second direction that is perpendicular to the first direction, the first insulating film having an upper surface that is above the lower surface of the two first wirings.

A semiconductor package includes a buffer die, a core die stack on the buffer die, the core die stack including a plurality of core dies stacked in a vertical direction perpendicular to an upper surface of the buffer die, and including a first sidewall, and an adhesive film including a first portion and a second portion, wherein the first portion of the adhesive film is arranged on a lower surface of a top die, the top die being disposed at an uppermost portion of the core die stack, the second portion of the adhesive film extends in a vertical direction and contacts the first sidewall of the core die stack, and the second portion of the adhesive film contacts an upper surface of the buffer die.