A semiconductor device is provided, which is configured to improve the adhesion between the resin part and the leads without interfering with proper operation of the semiconductor device. The semiconductor device includes a semiconductor element 1, a first lead 2 including a first pad portion 21, a second lead 3 including a second pad portion 31, a conductor member 61, and a resin part 8. The first pad portion 21 has a first-pad obverse surface 21a including a first smooth region 211 to which an element reverse surface 1b is bonded, and a first rough region 212 spaced apart from the semiconductor element 1 as viewed in z direction and has a higher roughness than the first smooth region 211. The second pad portion 31 has a second-pad obverse surface 31a including a second smooth region 311 to which a second bonding portion 612 is bonded, and a second rough region 312 spaced apart from the second bonding portion 612 as viewed in z direction and has a higher roughness than the second smooth region 311.

A method of forming a lead frame can include: providing a frame base; providing a substrate to support the frame base; and selectively etching the frame base to form first and second type pins. The first type pins are distributed in the central area of the lead frame, and the second type of the pins are distributed in the edge area of the lead frame. The first type pins are separated from the second type of the pins, and the first and second type pins are not connected by connecting bars. A pattern of a first surface of the first and second type pins is different from that of a second surface of the first and second type pins. The metal of the first surface is different from the metal of the second surface, and the second surface is opposite to the first surface.

A package construction includes: a die pad, and a suspension lead remaining portion connected to the die pad. Here, an offset portion is provided from a peripheral edge portion of the die pad to the suspension lead remaining portion. Also, the suspension lead remaining portion has: a first end portion connected to the die pad, and a second end portion opposite the first end portion. Further, the second end portion of the suspension lead remaining portion is exposed from the side surface of the sealing body at a position spaced apart from each of the upper surface and the lower surface.

Semiconductor chips to be singulated to individual semiconductor devices are arranged onto respective adjacent areas of a mounting substrate such as a pre-molded leadframe. The mounting substrate is made of a laminar, electrically conductive sculptured structure with molded electrically insulating material. Electrically conductive side formations in the adjacent areas of the mounting substrate include first and second pads at front and back surfaces, respectively, of the mounting substrate. The first contact pads at the front surface of the substrate include narrowed portions having side recesses. The second contact pads at the back surface of the substrate include widened portions having side extensions adjacent the side recesses. The electrically insulating material extends into the side recesses to provide anchoring formations of the insulating material to the electrically conductive sculptured structure of the mounting substrate.

A semiconductor device includes a support member, a semiconductor element and a sealing member. The semiconductor element is disposed on a first side in a thickness direction relative to the support member. The sealing member covers a part of the support member and the semiconductor element. The support member has a first surface facing a second side in the thickness direction and exposed from the sealing member. The first surface is formed with a first uneven region. In an example, the first uneven region has an arithmetic mean roughness between 0.2 m and 13 m. In an example, the first uneven region includes a plurality of uneven lines in an arc shape.

An integrated circuit package includes a leadframe with leads delimiting a center cavity. The leads of the leadframe have upper surfaces with a surface texture or finish having a first surface roughness. A drop-in die pad is installed within the center cavity. The drop-in die pad has an upper surface with a surface texture or finish having a second surface roughness that is rougher than the first surface roughness. An integrated circuit die is mounted to the upper surface of the drop-in die pad and electrical connections are formed between bonding pads of the integrated circuit die and the leads of the leadframe. An encapsulation body encapsulates the leadframe, drop-in die pad and electrical connections.

An example lead-frame package, a method of manufacturing the lead-frame package, and an electrical system comprising the lead-frame package utilizing an integrated insulating layer to electrically insulate an integrated circuit within the lead-frame package from one or more electrical components are provided. The example lead-frame package includes an integrated circuit substrate and an integrated circuit. An integrated insulating layer forms a first surface of the integrated circuit substrate. A plurality of conductive leads provides a conductive path between a second surface of the integrated circuit substrate and the first surface, with a conductive trace formed within the integrated circuit substrate. The integrated insulating layer defines conductive wirebond pads providing an electrical connection to the plurality of conductive leads. In addition, the integrated circuit is electrically isolated from the conductive trace by the integrated insulating layer, wherein the integrated circuit is positioned to determine an electromagnetic property of the conductive trace.

A semiconductor device has a substrate with a die mounting site and a plurality of leads. A first electrical component is disposed over a first surface of the die mounting site. A second electrical component is disposed over a second surface of the die mounting site opposite the first surface of the die mounting site. A first bond wire is coupled between the first electrical component and a first lead, and a second bond wire is coupled between the second electrical component and a second lead. A first encapsulant is deposited over the first electrical component, and a second encapsulant is deposited over the second electrical component with the leads exposed between the first encapsulant and second encapsulant. The leads are exposed from the first encapsulant and second encapsulant on a side of the semiconductor device.

An electronic device includes a non-conductive die attach film on a side of a conductive lead, a semiconductor die having a first side and a lateral side, the first side on the non-conductive die attach film, and the lateral side including striations, and a package structure enclosing the semiconductor die and a portion of the conductive lead. A method includes singulating portions of a non-conductive die attach film on a carrier, attaching a backside of a wafer to the singulated portions of the non-conductive die attach film, and singulating semiconductor dies of the wafer while the backside of the wafer is attached to the singulated portions of the non-conductive die attach film.

A semiconductor package contains a first semiconductor die, electrically coupled to a plurality of leads around a perimeter of the semiconductor package via a molded interconnect. The molded interconnect comprises a plurality of embedded interconnects in a first mold compound which electrically couple the plurality of bond pads of the first semiconductor die to the plurality of leads of the semiconductor package. The molded interconnect may have a greater cross-sectional area at a given pitch compared to a similar wire bonded semiconductor package and allow advantageous thermal management of the semiconductor package compared to other electrical coupling techniques. The molded interconnect may allow small high-power integrated circuits to be packaged with a package footprint which is smaller than would otherwise be available.