Disclosed herein are methods of forming a microelectronic component. In some embodiments, the method includes providing an element having a metallization layer that comprises a field dielectric and a conductive feature embedded in the field dielectric. The metallization layer also comprises a surface that includes the field dielectric and the conductive feature. The method further includes forming a copper feature over the conductive feature, forming a dielectric layer over sidewalls of the copper feature, and then planarizing the dielectric layer to form a hybrid bonding surface, where the copper feature is exposed at the hybrid bonding surface.

A chip includes a die; and a first dielectric layer disposed on a side of the die, and a plurality of bonding devices that penetrate the first dielectric layer. The plurality of bonding devices include a first bonding device and a second bonding device that are adjacent to each other, a channel between the first bonding device and the second bonding device is formed at the first dielectric layer, and a dielectric constant of the channel is less than a dielectric constant of a material of the first dielectric layer.

A copper diffusion-suppressing electrical bond between a first semiconductor wafer or chip or interposer and a second semiconductor wafer or chip or interposer includes a first bond pad metal with a first bond pad metal surface disposed on the first semiconductor wafer or chip or interposer, bonded with a second bond pad metal with a second bond pad metal surface disposed on the second semiconductor wafer or chip or interposer. A copper outdiffusion-suppressing coating such as a titanium, cobalt, nickel/gold, or nickel/palladium/gold layer may be disposed on the first copper bond pad metal surface and/or on the second copper bond pad metal surface. The copper of the bond pad metal may be doped with manganese to form a copper outdiffusion-suppressing surface manganese oxide. The bond pad metal may alternatively be tungsten to prevent copper outdiffusion.

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

A semiconductor device includes: a conductive portion; and a semiconductor element mounted on the conductive portion, wherein the conductive portion is made of a plating layer, wherein the conductive portion includes a mounting portion having a mounting surface on which the semiconductor element is mounted, and a terminal portion extending to an opposite side of the semiconductor element with respect to the mounting portion, wherein the mounting portion extends in a first direction along the mounting surface more than the terminal portion, and wherein the mounting portion and the terminal portion are integrally formed.

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad having a larger diameter or surface area (e.g., oversized for the application) may be used when a contact pad is positioned over a TSV in one or both substrates.

A method of electroplating a metal into features, having substantially different depths, of a partially fabricated electronic device on a substrate is provided. The method includes adsorbing accelerator into the bottom of recessed features; partially filling the features by a bottom up fill mechanism in an electroplating solution; diffusing leveler into shallow features to decrease the plating rate in shallow features as compared to deep features; and electroplating more metal into the features such that the height of metal in deep features is similar to the height of metal in shallow features.

A semiconductor device includes a substrate having a first main surface and a second main surface opposite to the first main surface, and a first conductive layer including a first metal layer and a second metal layer, the first metal layer covering the second main surface, the second metal layer covering the first metal layer and including dendrites, wherein a via hole extending through the substrate and having an inner wall surface is formed in the substrate, and wherein the first metal layer, which is covered with the second metal layer, covers the inner wall surface.

A semiconductor package including: a semiconductor package comprising a first semiconductor chip which includes a first face and a second face opposite to each other in a first direction, a first insulating layer which is disposed on the first face, and includes vias connected to each connecting pad of the first semiconductor chip, redistribution patterns which are disposed on the first insulating layer, under bump metal layers (UBM) which are respectively disposed on the redistribution patterns, a second insulating layer which covers a part of each of the redistribution patterns, and solder bumps which are respectively disposed on the UBMs, wherein the first insulating layer includes a third face and a fourth face opposite to the third face in the first direction, wherein the third face is adjacent to the first face, and a part of the fourth face does not overlap the second insulating layer in the first direction.

A microelectronic interconnect structure having a pre-formed hybrid bonding layer is disclosed. The hybrid bonding layer is formed over a temporary carrier comprising a substantially flat upper surface. A routing structure comprising a device or metallization layers is then provided over the hybrid bonding layer. After the hybrid bonding layer coupled with the routing structure is properly reinforced, the temporary carrier is removed to reveal a bonding surface of the hybrid bonding layer. The interconnect structure can comprise an organic dielectric material interspersing the hybrid bonding layer and forming part of the routing structure, and as such exhibit bending flexibility.