A method includes depositing a first dielectric layer covering an electrical connector, depositing a second dielectric layer over the first dielectric layer, and performing a first etching process to etch-through the second dielectric layer and the first dielectric layer. An opening is formed in the first dielectric layer and the second dielectric layer to reveal the electrical connector. A second etching process is performed to laterally etch the first dielectric layer and the second dielectric layer. An isolation layer is deposited to extend into the opening. The isolation layer has a vertical portion and a first horizontal portion in the opening, and a second horizontal portion overlapping the second dielectric layer. An anisotropic etching process is performed on the isolation layer, with the vertical portion of the isolation layer being left in the opening.

A chip stacking structure includes: a first chip, a second chip stacked with the first chip, a first redistribution layer, a second redistribution layer, a third redistribution layer, a first conductive channel, and a second conductive channel; the first redistribution layer is disposed on a surface of the first chip facing the second chip; the second redistribution layer is disposed on a passive surface of the second chip, and the third redistribution layer is disposed on an active surface of the second chip; the first conductive channel passes through the second chip and the third redistribution layer, connecting the first redistribution layer and the second redistribution layer; and the second conductive channel passes through the second chip, connecting the second redistribution layer and the third redistribution layer.

An embodiment method of forming a hybrid bond between a first semiconductor device component and a second semiconductor device component may include forming the first semiconductor device component including a first electrical bonding structure formed within a first dielectric material; forming the second semiconductor device component including a second electrical bonding structure formed within a second dielectric material; placing the first semiconductor device component and the second semiconductor device component together such that the first electrical bonding structure is in contact with the second electrical bonding structure; performing a first annealing process that forms a direct metal-to-metal bond between the first electrical bonding structure and the second electrical bonding structure; and performing a second annealing process that forms a direct dielectric-to-dielectric bond between the first dielectric material and the second dielectric material.

One of the semiconductor devices includes a semiconductor device includes a conductive pad, a passivation layer and a conductive pattern. The passivation layer surrounds the conductive pad and has a sidewall interfacing with a sidewall of the conductive pad. The conductive pattern is disposed in the passivation layer and electrically connected to the conductive pad, wherein a first surface of the conductive pattern interfacing with the passivation layer and the conductive pad has at least one turning point.

Disclosed herein is an electronic component that includes: a substrate; a capacitor on the substrate; a first insulating resin layer embedding therein the capacitor; an inductor provided on the first insulating resin layer and connected to the capacitor, the inductor including a conductor pattern; a second insulating resin layer embedding therein the inductor; a third insulating resin layer on the second insulating resin layer; a post conductor having a lower end and an upper end and penetrating the third insulating resin layer such that the lower end of the post conductor is connected to the inductor; and a terminal electrode on the third insulating resin layer and connected to the upper end of the post conductor. In a thickness direction of the substrate, the height of the post conductor is larger than a thickness of a conductor pattern constituting the inductor.

A semiconductor package includes a first semiconductor chip including a first substrate, a plurality of first pads on the first substrate, and a plurality of through-electrodes extending through the first substrate and connected to the plurality of first pads, and a second semiconductor chip on the first semiconductor chip, the second semiconductor chip including a second substrate, and a plurality of second pads below the second substrate and in contact with the plurality of first pads. The plurality of first pads includes a first group of first pads each including a first base layer including a first recess, and a first conductive pattern layer and a first insulating pattern layer alternately disposed in the first recess, and a second group of first pads each including a second base layer including a second recess, and a second conductive pattern layer disposed in the second recess.

Embodiments provide a method and resulting structure that includes forming an opening in a dielectric layer to expose a metal feature, selectively depositing a metal cap on the metal feature, depositing a barrier layer over the metal cap, and depositing a conductive fill on the barrier layer.

A device and method for producing a semiconductor component. The method includes: arranging a dielectric layer between a first electrode and a second electrode of the semiconductor component, there being defects of a first defect type in the dielectric layer; determining a time period for movement of defects of the first defect type into a target position in the dielectric layer; determining a first voltage for the movement of said defects in the dielectric layer; applying the first voltage between the first electrode and the second electrode in the time period.

A display device includes a substrate including a display area and a pad area; a first conductive layer including a first pad electrode in the pad area; and a second conductive layer the second conductive layer includes a second pad electrode on the first pad electrode in the pad area; the first pad electrode and the second pad electrode overlap in a first direction that is a thickness direction, and do not overlap in a second direction perpendicular to the first direction.

A semiconductor device package includes a substrate, a first patterned conductive layer, a second patterned conductive layer, a dielectric layer, a third patterned conductive layer and a connector. The substrate has a top surface. The first patterned conductive layer is on the top surface of the substrate. The second patterned conductive layer contacts the first patterned conductive layer. The second patterned conductive layer includes a first portion, a second portion and a third portion. The second portion is connected between the first portion and the third portion. The dielectric layer is on the top surface of the substrate. The dielectric layer covers the first patterned conductive layer and surrounds the second portion and the third portion of the second patterned conductive layer. The first portion of the second patterned conductive layer is disposed on the dielectric layer. The third patterned conductive layer is on the second patterned conductive layer, and the connector is directly on the third patterned conductive layer.