A package substrate based on a molding process may include an encapsulation layer, a support frame located in the encapsulation layer, a base, a device located on an upper surface of the base, a copper boss located on a lower surface of the base, a conductive copper pillar layer penetrating the encapsulation layer in the height direction, and a first circuit layer and a second circuit layer over and under the encapsulation layer. The second circuit layer includes a second conductive circuit and a heat dissipation circuit, the first circuit layer and the second conductive circuit are connected conductively through the conductive copper pillar layer, the heat dissipation circuit is connected to one side of the device through the copper boss and the base, and the first circuit layer is connected to the other side of the device.

Various aspects of this disclosure provide a semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising a stacked die structure and a method of manufacturing thereof.

A wafer level fan out semiconductor device and a manufacturing method thereof are provided. A first sealing part is formed on lateral surfaces of a semiconductor die. A plurality of redistribution layers are formed on surfaces of the semiconductor die and the first sealing part, and solder balls are attached to the redistribution layers. The solder balls are arrayed on the semiconductor die and the first sealing part. In addition, a second sealing part is formed on the semiconductor die, the first sealing part and lower portions of the solder balls. The solder balls are exposed to the outside through the second sealing part. Since the first sealing part and the second sealing part are formed of materials having thermal expansion coefficients which are the same as or similar to each other, warpage occurring to the wafer level fan out semiconductor device can be suppressed.

A two-sided interconnected embedded chip packaging structure includes a first insulating layer and a second insulating layer. The first insulating layer includes a first conductive copper column layer penetrating through the first insulating layer in a height direction and a first chip located between adjacent first conductive copper columns, and the first chip is attached to the inside of the lower surface of the first insulating layer. The second insulating layer includes a first conductive wire layer and a heat radiation copper surface which are located in the upper surface of the second insulating layer, the first conductive wire layer is provided with a second conductive copper column layer, the first conductive copper column layer is connected with the first conductive wire layer, and the heat radiation copper surface is connected with the reverse side of the first chip.

A device may include a plurality of chiplets stacked on top of each other. Each chiplet includes: one or more electronic components; a plurality of connections electrically connecting the one or more electronic components, the plurality of connections formed in one or more metal layers; main surfaces and side surfaces, wherein the main surfaces of adjacent chiplets of the plurality of chiplets face each other. The device may further include an electrically conductive connection formed on at least one side surface of at least one chiplet of the plurality of chiplets to electrically connect one or more connections of the plurality of connections of one or more chiplets of the plurality of chiplets.

A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

Integrated circuit packages and methods of forming the same are disclosed. A first die is mounted on a first side of a workpiece, the workpiece including a second die. The workpiece is mounted to a front side of a package substrate, where the first die is at least partially disposed in a through hole in the package substrate. A heat dissipation feature may be attached on a second side of the workpiece. An encapsulant may be formed on the front side of the package substrate around the workpiece.

Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 . The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.

Semiconductor devices and methods are provided which facilitate improved thermal conductivity using a high-kappa dielectric bonding layer. In at least one example, a device is provided that includes a first substrate. A semiconductor device layer is disposed on the first substrate, and the semiconductor device layer includes one or more semiconductor devices. Frontside interconnect structure are disposed on the semiconductor device layer, and a bonding layer is disposed on the frontside interconnect structure. A second substrate is disposed on the bonding layer. The bonding layer has a thermal conductivity greater than 10 W/m-K.

A method of manufacturing a high-frequency device includes mounting a first chip having a first pillar on an upper surface thereof on a metal base, forming an insulator layer covering the first chip on the metal base, exposing an upper surface of the first pillar from the insulator layer, and forming a first wiring connected to the first pillar on the insulator layer and transmitting a high-frequency signal.