Proposed is a semiconductor package having air via, which can reduce RF loss and increase the frequency bandwidth by reducing dielectric loss and parasitic capacitance components of semiconductor packages by providing an air via vertically in the space between first, second, and third dielectric layers, which are sequentially stacked with a signal line pad and a ground pad, thereby improving package performance.

A semiconductor device includes: an insulated circuit substrate including a base plate, a resin layer on the base plate, and a circuit pattern on the resin layer; a semiconductor chip that is rectangular and is bonded to the circuit pattern such that a side edge of the semiconductor chip is spaced inwardly from an outer peripheral edge of the circuit pattern by a predetermined distance; a case on the resin layer and surrounds the circuit pattern and the semiconductor chip; and a sealing material that covers the insulated circuit substrate and semiconductor chip and is surrounded by the case. The predetermined distance and thickness of the circuit pattern are greater than or equal to 0.1 of a length of one side of the semiconductor chip. A peripheral region of the case and a peripheral region of the resin layer are connected to each other via an adhesive layer.

A heat conduction sheet includes a heat conduction layer containing at least one kind of graphite particles (A) selected from the group consisting of scale-like particles, ellipsoidal particles and rod-like particles, wherein in a case of scale-like particles, a plane direction of the particle is oriented in a thickness direction of the heat conduction sheet, and in a case of ellipsoidal particles or rod-like particles, a long axis direction of the particle is oriented in the thickness direction of the heat conduction sheet, and the heat conduction sheet contains a metal component having a melting point of 200 C. or less.

A semiconductor device according to an embodiment includes a semiconductor chip, a substrate, and an adhesive layer. The substrate supports the semiconductor chip. The adhesive layer is disposed between the semiconductor chip and the substrate. The adhesive layer bonds the semiconductor chip and the substrate. The adhesive layer has a first portion and a plurality of second portions. The first portion is formed of a first material. The plurality of second portions are formed of a second material. The second material has a greater elastic modulus and a greater thermal conductivity than the first material. The second portions are located inside the first portion. Each of the second portions is in contact with and connects the semiconductor chip and the substrate.

A semiconductor package includes a substrate with electrical conductors, one or more semiconductor dies disposed on the substrate and electrically connected with the electrical conductors of the substrate, and a lid disposed on the substrate. The one or more semiconductor dies are disposed in a space enclosed by the substrate and the lid. At least one thermoelectric device is at least partly embedded in the lid. The at least one thermoelectric device may be operated to cool the semiconductor package, or to heat the semiconductor package. A controller for the at least one thermoelectric device may be implemented in the one or more semiconductor dies.

The present invention relates to a method of connecting a cooler module (4) to a metal plate by a sintering process, wherein the cooler module (4) comprises a metallic housing (5) having a coolant inlet (7), a coolant outlet (8) and a first housing side (9), and within the housing (5) a coolant flow structure (6), and wherein the method comprises the steps of: introducing at least one glycol between the coolant flow structure (6), applying a sinter paste and sintering to join the metal plate and the first housing side (9) under pressure and temperature.

An example memory device includes a logic die configured to output a control signal based on temperature data, and a first core die. The first core die includes a first plurality of memory cells configured to store data, a first temperature sensor configured to measure a temperature of the first plurality of memory cells and to output first temperature data based on the temperature of the first plurality of memory cells, and a first heating circuit configured to generate heat based on the control signal and the first temperature data.

This invention provides opportunity for diamond and bi-wafer microstructures to be implemented in advanced ICs and advanced IC packages to form a new breed of ICs and SiPs that go beyond the limitations of silicon at the forefront of IC advancement due primarily to diamond's extreme heat dissipating ability. Establishing the diamond and bi-wafer microstructure capabilities and implementing them in advanced ICs and advanced IC packages gives IC and package architects and designers an extra degree of design freedom in achieving extreme IC performance, particularly when thermal management presents a challenge. Diamond's extreme heat spreading ability can be used to dissipate hotspots in processors and other high-power chips such as GaN HEMT, resulting in performance and reliability enhancement for IC and package applications covering HPC, AI, photonics, 5G RF/mmWave, power and IoT, and at the system level propelling the migration from traditional computing to near-memory computing and in-memory computing.

A printed wiring board assembly is disclosed that includes a printed wiring board with a first side and a second side opposite first side. Magnet structures are in physical contact with the printed wiring board and a microelectronic device component is coupled to the first side of the printed wiring board. A heat spreader overlies and is in thermal communication with the microelectronic device component, and posts are coupled to the heat spreader and horizontally neighbor the microelectronic device component, where the posts are in magnetic communication with the magnet structures. Related methods and electronic systems are also disclosed.

A resin enclosure includes: an inner wall portion from a wall surface defining the space to a side surface of the lead terminal close to the space; and a covering portion that covers at least a part of a top surface of a first portion of the lead terminal.