A semiconductor module includes: an insulator substrate; a first metallization layer arranged at the insulator substrate; and two or more controllable semiconductor elements arranged on a surface of the first metallization layer. Each controllable semiconductor element includes: a gate electrode; a first load electrode; a second load electrode; a control current path between the control electrode and the first load electrode; a controllable load current path between the first load electrode and the second load electrode; and a first circuit element arranged between the control current path and the load current path.

A modular POL component can be arranged to define a half-bridge converter topology, and can be coupled with other modular POL power components to define a full-bridge or 3-phase AC converter topology based on a desired power output. The assembled POL components can be mounted on a common electrically insulative substrate to define a POL power conversion device to provide the desired power output.

An integrated circuit (IC) chip having fault protection features. The IC chip in an embodiment may include a lead frame having a first portion adapted to accommodate an IC bare die and a second portion separated from first portion and adapted to be configured as an electrically conductive lead pad. The electrically conductive connector includes a lead fuse section having a reduced size in comparison with a remainder of the second portion.

An integrated circuit (IC) chip having fault protection features. The IC chip in an embodiment may include a lead frame having a first portion adapted to accommodate an IC bare die and a second portion separated from first portion and adapted to be coupled to the IC bare die by an electrically conductive connector. The electrically conductive connector includes a connector bridging portion having a reduced size in comparison with a remainder of the electrically conductive connector and having an elevated portion that is protruding relative to the remainder of the electrically conductive connector.

A power semiconductor module includes a flexible first substrate and a flexible second substrate and a first and second power semiconductor switch arranged between the first and second substrate. The first substrate has an electrically conductive first metal layer facing towards the power semiconductor switches, an electrically conductive second metal layer and an electrically non-conductive first insulation film arranged between the first and second metal layer. The second substrate has an electrically non-conductive second insulation film and a third metal layer arranged on the second insulation film. The first and second power semiconductor switch are electrically interconnected by the first and second substrate to form a half-bridge circuit.

A semiconductor device includes: an insulated circuit substrate including a conductive plate on a top surface side; a semiconductor chip mounted on the conductive plate; a printed circuit board provided over and electrically connected to the semiconductor chip; a first external connection terminal electrically connected to the conductive plate and extending upward from the conductive plate; a first conductive block provided to surround an outer circumference of the first external connection terminal in an insulated state; and a sealing member provided to seal the semiconductor chip, the printed circuit board, and the first conductive block.

A semiconductor device includes: a second metal pattern electrically connected to a first semiconductor element and a second semiconductor element; a third metal pattern electrically connected to the second semiconductor element; a fifth metal pattern electrically connected to the third semiconductor element and a fourth semiconductor element; a sixth metal pattern electrically connected to the fourth semiconductor element; and a first conductive portion straddling the third metal pattern and the sixth metal pattern in plan view and electrically connecting the second metal pattern and the fifth metal pattern.

A semiconductor device includes a lower substrate, a semiconductor element mounted on an upper surface of the lower substrate, an upper substrate disposed on an upper surface of the semiconductor element, one or more through holes extending through the upper substrate in a thickness-wise direction, an encapsulation resin disposed between the lower substrate and the upper substrate and encapsulating the semiconductor element, a wiring layer disposed on an upper surface of the upper substrate, and a covering resin covering the upper surface of the upper substrate and filling the through holes.

A power module include at least one substrate including an insulating layer and a metal circuit disposed on a first side of the insulating layer, a semiconductor chip, and at least one vapor chamber including a fluid flowing therein and disposed between the semiconductor chip and one of the at least one substrate, wherein each of the at least one vapor chamber includes a first side thereof including a plane area greater than or equal to a plane area of the semiconductor chip and connected to the metal circuit of the one of the at least one substrate, and a second side thereof facing the first side along a first direction and connected to the semiconductor chip.

A semiconductor device, including: a semiconductor chip; an insulated circuit substrate that has: a metal plate including a ground region on an upper surface thereof, an insulating layer disposed on the upper surface of the metal plate with the ground region exposed therefrom, and a conductive circuit pattern plate on which the semiconductor chip is mounted; a ground wiring member conductively connected to the ground region of the metal plate, the ground wiring member being conductive and including an upper end portion located above the insulated circuit substrate; and a sealing member sealing the semiconductor chip, the insulated circuit substrate and the ground wiring member, the sealing member having a sealing upper surface and including an opening formed therein to expose therethrough the upper end portion of the ground wiring member above the insulated circuit substrate.