A semiconductor device, including: a stacked substrate; a semiconductor device element mounted on the stacked substrate via a first bonding layer; a metal base bonded to the stacked substrate via a second bonding layer, the metal base having two ends and a center portion; and a water jacket bonded to the metal base. The first and second bonding layers are identical, or different, in a material and a composition thereof. The metal base has a plurality of heat dissipation fins, lengths of which are in an ascending order from each of the ends to the center portion of the metal base.

A phase change thermal interface material including a thermally conductive filler, a phase change wax, a coupling agent, and a polymer matrix material. The thermally conductive filler includes from about 50 wt. % to about 70 wt. % aluminum powder; from about 19 wt. % to about 30 wt. % aluminum oxide; and from about 1 wt. % to about 9 wt. % zinc oxide, based on the total weight of the phase change thermal interface material. The phase change thermal interface material has a thermal impedance from about 0.02 Ccm.sup.2/W to about 0.04 Ccm.sup.2/W, as determined by ASTM D5470.

A semiconductor package includes a substrate with electrical conductors, one or more semiconductor dies disposed on the substrate and electrically connected with the electrical conductors of the substrate, and a lid disposed on the substrate. The one or more semiconductor dies are disposed in a space enclosed by the substrate and the lid. At least one thermoelectric device is at least partly embedded in the lid. The at least one thermoelectric device may be operated to cool the semiconductor package, or to heat the semiconductor package. A controller for the at least one thermoelectric device may be implemented in the one or more semiconductor dies.

The present invention relates to a method of connecting a cooler module (4) to a metal plate by a sintering process, wherein the cooler module (4) comprises a metallic housing (5) having a coolant inlet (7), a coolant outlet (8) and a first housing side (9), and within the housing (5) a coolant flow structure (6), and wherein the method comprises the steps of: introducing at least one glycol between the coolant flow structure (6), applying a sinter paste and sintering to join the metal plate and the first housing side (9) under pressure and temperature.

An immersive cooling system is described. The system includes an immersive cooling container, including: a first reservoir; a second reservoir; numerous slots, each configured to hold a casing; a reservoir connector corresponding to each slot, and configured to provide fluid communication with the first reservoir; and a pump configured to convey a dielectric immersion cooling liquid from the second reservoir to the first reservoir. The immersive cooling system also includes a casing, configured to contain an electronic device and to fit within a slot of the container. The casing includes an inlet configured to be in fluid communication with the reservoir connector of the slot within which the casing is disposed to facilitate flow of the cooling liquid into an interior of the casing through the reservoir connector and an outlet configured to facilitate flow of the cooling liquid from the interior of the casing into the second reservoir.

A power module includes: a first substrate having an outer surface and an inner surface; a semiconductor die coupled to the inner surface of the first substrate; a second substrate having an outer surface and an inner surface, the semiconductor die being coupled to the inner surface of the second substrate; and a flex circuit coupled to the semiconductor die.

Provided is a semiconductor device in which breakage of a lead part caused by vibration hardly occurs. A semiconductor device includes: a semiconductor module including a plurality of lead parts; a circuit substrate connected to the plurality of lead parts of the semiconductor module; and a heatsink attached to the semiconductor module on a side opposite to a side of the circuit substrate. The plurality of lead parts include first lead parts as the lead parts disposed on both ends and second lead parts as lead parts disposed in positions other than both ends. The first lead part is thicker than the second lead part in a part between a root part as a part protruding from the semiconductor module and a connection part as a part connected to the circuit substrate.

A semiconductor module includes a heat sink configured to conduct a cooling fluid in a cooling-fluid flow direction. A first semiconductor assembly is arranged on a surface of the heat sink. The first semiconductor assembly includes a first substrate having a first dielectric material layer, and a first semiconductor element connected to the first substrate. A second semiconductor assembly is arranged on the surface of the heat sink and closest to a downstream end of the heat sink. The second semiconductor assembly includes a second substrate having a second dielectric material layer, and a second semiconductor element connected to the second substrate. The second dielectric material layer has a thermal conductivity which is higher than a thermal conductivity of the first dielectric material layer.

A heat sink, a thermal module, and an electronic device are provided. The heat sink includes a base and a plurality of curved fins arranged in parallel on the base. Each curved fin has a plurality of wave peaks, with a pitch defined between any two adjacent wave peaks, and at least two of the plurality of wave peaks are different.

An immersion tank storage system for a data center, includes: a frame defining a plurality of storage levels disposed above one another; a plurality of immersion tanks supported by the frame, each immersion tank configured to contain electronic devices and an immersion cooling liquid for cooling thereof, each storage level being configured to house first and second immersion tanks; and means for synchronously moving the first and second immersion tanks housed in at least one of the storage levels between: a storage position in which the first and second immersion tanks are spaced from each other by a first distance; and an access position in which the first and second immersion tanks are spaced from each other by a second distance greater than the first distance, wherein in the access position, the first and second immersion tanks are accessible by an operator for accessing the electronic devices contained therein.