An electronic device comprising a multideck structure including a base stack of materials and one or more stacks of materials on the base stack of materials, at least one high aspect ratio feature in an array region in the base stack of materials and in the one or more stacks of materials, and overlay marks including an optical contrast material in or on only an upper portion of the base stack of materials in an overlay mark region of the electronic device is disclosed. The overlay mark region is laterally adjacent to the array region and the overlay marks are adjacent to at least one additional high aspect ratio feature in the base stack of materials. Additional electronic devices and memory devices are disclosed.

Provided herein is a semiconductor device. The semiconductor device includes a wafer extending in a plane in a first direction and a second direction, a first insulating layer, a second insulating layer, and a third insulating layer sequentially stacked in a third direction over a surface of the wafer, a plurality of lower vernier patterns disposed in the first insulating layer and the second insulating layer, and a plurality of dummy patterns disposed in the third insulating layer.

A device wafer processing method includes a protective film coating step of coating a face side of a device wafer with a protective film, a laser processing step of applying a laser beam having a wavelength absorbable by the device wafer to the device wafer along streets and forming laser processing grooves that divide a device layer, a tape affixing step of affixing a tape to the protective film on the device wafer, a holding step of holding the face side of the device wafer by a holding table via the tape and exposing a reverse side of the device wafer, and a cutting step of cutting the device wafer held on the holding table, by a cutting blade from the reverse side along the streets, and dividing the device wafer into individual devices.

A chip production method in which a workpiece having a plurality of planned dividing lines set on a side of a front surface of a substrate and a functional layer formed on the front surface is divided along the planned dividing lines to produce chips, includes: applying a laser beam along the planned dividing lines to remove respective parts of the functional layer and form, in the substrate, respective processed grooves having a depth smaller than a finished thickness; processing a side of a back surface of the substrate to thin the substrate to the finished thickness; and after the processing, imparting an external force to the workpiece to divide the workpiece into a plurality of chips along the processed grooves.

Semiconductor devices and a method for manufacturing the semiconductor devices are provided. The method includes forming a plurality of bit-line structures on a chip region of a substrate, forming a first alignment key pattern on a scribe line region of the substrate, forming a first alignment key trench in at least a portion of the first alignment key pattern, forming a landing pad layer between the plurality of bit-line structures and on top surfaces of the plurality of bit-line structures, forming a gap-fill layer on the landing pad layer and in an unoccupied portion of the first alignment key trench and performing a planarization process on the gap-fill layer and the landing pad layer.

Provided is a method of manufacturing an image sensor package, the method including preparing a device wafer including a plurality of chip portions and a scribe lane, forming a redistribution insulating film on a lower surface of the device wafer to cover a redistribution pattern and a portion of the redistribution pattern and to cover a lower surface of the device wafer, forming a redistribution pattern on a lower surface of the device wafer and a redistribution insulating film to cover a portion of the redistribution pattern and to cover a lower surface of the device wafer, placing a preliminary transparent substrate on an upper surface of the device wafer on which the preliminary dam pattern is formed, performing a laser bonding process of radiating a laser beam to the preliminary dam pattern, and performing a singulation process forming individual image sensor packages.

A method for manufacturing a semiconductor device, including: providing a substrate including an element region and a scribe lane region; forming a first mask pattern on the element region of the substrate, and a spacer on a side face of the first mask pattern; forming a mask film that extends along the first mask pattern, the spacer, and the substrate, wherein the mask film includes a stepped portion on the scribe lane region of the substrate; forming a sacrificial pattern filling the stepped portion; forming a second mask pattern by etching the mask film to expose the first mask pattern and the spacer; removing the spacer and the sacrificial pattern; and forming a gate trench inside the substrate using the first mask pattern and the second mask pattern as etching masks

A method includes performing a laser ablation process that removes a portion of a wafer to form a trench in a scribe region between adjacent die regions of the wafer, the trench extending from a first side of the wafer toward an opposite second side of the wafer, the trench extending through a metallization structure and an active circuit portion of the wafer, and a bottom of the trench spaced apart from the second side of the wafer. The method also includes performing a wafer expansion process that separates individual semiconductor dies from the wafer after the laser ablation process.

Memory circuitry comprises an integrated circuit die comprising a radially-outermost region surrounding a radially-inner region. The inner region comprises a memory-array region. The radially-outermost region comprises a lower semiconductor material, insulative material directly above the lower semiconductor material, and a stack comprising alternating tiers of different composition semiconductive materials directly above the insulative material. A conductive-wall construction is in the radially-outermost region at least partially surrounding the inner region. Other embodiments, including methods, are disclosed.

A method for fabricating a semiconductor structure is provided. The method includes providing a plurality of chip regions on a substrate. The method includes forming a plurality of scribe line regions among the chip regions on the substrate. The scribe line regions each include a testing region having a plurality of testing patterns and a dicing region around the test region. The dicing region has a dummy band adjacent to the testing region, and a plurality of dummy patterns are formed in the dummy band and electrically isolated from the testing patterns. The method also includes separating the chip regions along the dicing region of the scribe line regions.