A semiconductor chip includes a lower wiring layer, a multilayer wiring layer formed on the lower wiring layer, and an upper wiring layer formed on the multilayer wiring layer. Here, a thickness of a wiring provided in the lower wiring layer is larger than a thickness of each of a plurality of wirings provided in the multilayer wiring layer, and a thickness of a wiring provided in the upper wiring layer is larger than the thickness of each of the plurality of wirings provided in the multilayer wiring layer. A lower inductor which is a component of a transformer is provided in the lower wiring layer, and an upper inductor which is a component of the transformer is provided in the upper wiring layer.

A semiconductor structure with a silicon through via (TSV) includes a semiconductor substrate. A TSV penetrates the semiconductor substrate. The TSV includes a metal layer, a barrier layer and an isolation layer. An end of the metal layer protrudes from a back side of the semiconductor substrate. A recess is disposed at one side of the end of the metal layer. A composite structure fills the recess. The composite structure includes a thermal conductive layer and a first dielectric layer. The thermal conductive layer contacts the sidewall of the end of the metal layer and contacts the barrier layer, the isolation layer and the semiconductor substrate. A first dielectric layer is disposed on the thermal conductive layer. A top surface of the first dielectric layer is aligned with the end of the metal layer. The thermal conductive layer includes aluminum nitride, aluminum oxide or diamond.