In one embodiment, an aperture correction amount calculation method is for calculating a correction amount for positions or dimensions of a plurality of apertures formed in an aperture array substrate through which multiple charged particle beams pass. The method includes measuring a shift amount distribution on an irradiation surface, which is a distribution of shift amounts from a predetermined position or a predetermined current density of each beam within a beam array of the multiple charged particle beams, dividing the beam array into a predetermined number of block regions based on the shift amount distribution, and calculating a representative value of the shift amounts corresponding to each block region, and calculating, for each of the block regions, correction amounts for positions or dimensions of the corresponding apertures of the aperture array substrate based on the representative values.

A grid assembly for injecting process gas to a chamber. The grid assembly including a gas inlet for delivering the process gas to the grid assembly, a plurality of nozzles extending vertically through at least a portion of the grid assembly, and a plurality of layers in a vertical stacked arrangement. The plurality of layers including a top layer including one or more internal gas injection channels configured to receive process gas from the gas inlet, a bottom layer including a plurality of internal gas injection channels having one or more injection apertures configured to deliver the process gas about a horizontal plane to one or more of the plurality of nozzles, and one or more sublayers disposed between the top layer and the bottom layer, each of the one or more sublayers including an increasing number of internal gas injection channels as the one or more sublayers advance from the top layer to the bottom layer. Plasma processing apparatuses and method of processing workpiece are also provided.

A device includes a chuck. The chuck has an upper portion and a lower portion larger than the upper portion and includes first apertures, second apertures, third apertures and a gas supply channel. The first apertures are disposed at a top surface of the upper portion of the chuck. The second apertures are disposed at a sidewall of the upper portion of the chuck. The third apertures are disposed at a top surface of the lower portion of the chuck. The gas supply channel extends through the chuck and connecting the first apertures, the second apertures and the third apertures.

A system and method for improving the operating range of an ion source for the extraction of an ion beam with a high tilt angle are disclosed. The system includes a semiconductor processing system that includes an extraction plate having an extraction aperture that is not parallel to the surface of the workpiece. An extraction electrode is disposed outside the ion source near the extraction aperture to attract ions toward the workpiece. The voltage applied to this extraction electrode may be varied to affect the extracted ion beam. The extraction aperture may comprise an elongated slot and the extraction electrode may be separated into two pieces, one on each side of the elongated slot. In this way, the two pieces of the extraction electrode may be independently biased. This feature may also allow variation of the tilt angle.