H10W76/161

Integrated Circuit Cooling Utilizing Wire Bonding On Metallized Layer

A semiconductor die includes a metalized layer on an upper surface of the semiconductor die and a plurality of metal wires having a defined shape. At least one end of each of the plurality of metal wires is bonded to the metalized layer and an upper portion of each of the plurality of metal wires may extend at least partially in parallel to the metalized layer of the semiconductor die. The plurality of metal wires are arranged in a sequence such that a channel is formed by a space between the metalized layer of the semiconductor die and the upper portion of each of the metal wires that may extend at least partially in parallel to the metalized layer. The upper portion of each of the plurality of metal wires is configured to be flush with an inner surface of a cover. A cooling system including such a semiconductor die is also provided.

ENHANCED VIDEO BANDWIDTH DEVICE PACKAGES
20260026363 · 2026-01-22 ·

Semiconductor device packages including leads for enhanced video bandwidth and related operating criteria are described. An example package includes a flange having a top surface, a frame secured to the flange, and a pair of output leads. The frame forms an air cavity bounded in part by the top surface of the flange. The pair of output leads extend from outside the frame, through at least a portion of the frame, and to within the air cavity. The package also includes a decoupling lead positioned between the pair of output leads. The package also includes a second decoupling lead positioned between the pair of output leads in some examples. The decoupling lead or leads between the output leads facilitate the use of off-package decoupling capacitors to meet video bandwidth and other operating specifications. The package can also include one or more additional decoupling leads between input leads.

SEMICONDUCTOR MODULE AND A METHOD FOR FORMING THE SAME
20260060137 · 2026-02-26 · ·

A semiconductor module comprises a metallic sheet comprising a first surface. The semiconductor module further comprises a semiconductor die coupled to the first surface of the metallic sheet. An electrically insulative housing comprises a circumferential frame, wherein the electrically insulative housing encloses the semiconductor die and at least a part of the first surface of the metallic sheet. Furthermore, a joining section of the circumferential frame is directly joined to the first surface of the metallic sheet, wherein an electrically inducible element is enclosed near the joining section of the circumferential frame.

Semiconductor device, electronic device including the same, and manufacturing method thereof

A semiconductor device includes a circuit substrate, a semiconductor package, connective terminals and supports. The circuit substrate has a first side and a second side opposite to the first side. The semiconductor package is connected to the first side of the circuit substrate. The connective terminals are located on the second side of the circuit substrate and are electrically connected to the semiconductor package via the circuit substrate. The supports are located on the second side of the circuit substrate beside the connective terminals. A material of the supports has a melting temperature higher than a melting temperature of the connective terminals.

Template structure for quasi-monolithic die architectures

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die having a surface; a template structure having a first surface and an opposing second surface, wherein the first surface of the template structure is coupled to the surface of the first die, and wherein the template structure includes a cavity at the first surface and a through-template opening extending from a top surface of the cavity to the second surface of the template structure; and a second die within the cavity of the template structure and electrically coupled to the surface of the first die by interconnects having a pitch of less than 10 microns between adjacent interconnects.

LAMINATE PACKAGE LID TO PREVENT DELAMINATION
20260068744 · 2026-03-05 ·

An example laminate package, a method for manufacturing the laminate package, and an electrical system comprising the laminate package configured to prevent delamination of the thermal interface material is provided. The example laminate package includes a semiconductor IC electrically connected to a substrate in a flip-chip ball grid array configuration a substrate, and a laminate package lid. The laminate package lid includes a top portion, an outer wall, and a protruding member. The top portion covering the semiconductor IC, wherein the top portion of the laminate package lid is in thermal contact with the semiconductor IC. The outer wall perpendicular to the top portion, wherein the outer wall is attached to an outer portion of the substrate by a first adhesive substance. The protruding member extending from the top portion and attaching to the substrate between the semiconductor IC and the outer wall by a non-conductive adhesive substance.

Package comprising a lid structure with a compartment

A package comprising a substrate, a first integrated device coupled to a first surface of the substrate, a lid structure coupled to the substrate, where the lid structure includes a first compartment comprising a side surface and an inner top surface, and a thermal interface material coupled to (i) the first integrated device and (ii) the side surface and the inner top surface of the first compartment of the lid structure. The substrate includes at least one dielectric layer and a plurality of interconnects.

SEMICONDUCTOR MODULE COMPRISING A HOUSING
20260090385 · 2026-03-26 · ·

A semiconductor module comprises a substrate comprising a dielectric insulation layer and at least a first metallization layer arranged on the dielectric insulation layer, and a housing comprising sidewalls, the sidewalls defining an internal volume of the housing, wherein the housing is arranged such that the substrate is arranged within the internal volume defined by the sidewalls, with the metallization layer facing the internal volume of the housing, the housing comprises at least one mounting element for securely mounting the housing on a heat sink, and the sidewalls of the housing consist of an electrically conducting material.

SEMICONDUCTOR MODULE
20260107829 · 2026-04-16 · ·

A semiconductor module, including: a semiconductor element; a wiring board on which the semiconductor element is mounted; a case that has a shape of a frame, to thereby form a housing space to house the semiconductor element and the wiring board; a terminal that is electrically connected to the wiring board; a lid that closes the housing space, the lid including a lid through-hole into which the terminal is inserted; an inner cover disposed in the housing space, the inner cover having an inner through-hole into which the terminal is inserted; and a sealing material disposed between the lid and the inner cover, and sealing the terminal.