A chip package assembly includes a first high-power chip, a second low-power chip, a thermal cooling device and a heterogeneous thermal interface material (HTIM). The thermal cooling device may overlie the first chip and the second chip. The HTIM includes a first thermal interface material (TIM) and a second TIM. The first TIM overlies the first chip, and the second TIM overlies the second chip. The first TIM includes a material that has a first thermal conductivity and a first modulus of elasticity. The first TIM can reflow when the first die reaches a first TIM reflow temperature. The second TIM comprises at least a polymer material. The second TIM has a second modulus of elasticity that is greater than the first modulus of elasticity and a second thermal conductivity that is less than the first thermal conductivity.

A semiconductor packaging device includes a packaging module, a heat dissipation cover and a thermal interface material layer. The package module includes a substrate, and a working chip mounted on the substrate. The heat dissipation cover includes a metal cover fixed on the substrate and covering the working chip, an accommodating recess located on the metal cover to accommodate the working chip, and a plurality of protrusive columns respectively formed on the metal cover and distributed within the accommodating recess at intervals. The depth of the accommodating recess is greater than the height of each protrusive column, and the accommodating recess is greater than the working chip. The thermal interface material layer is non-solid, and located within the accommodating recess between the protrusive columns to wrap the protrusive columns and contact with the working chip, the metal cover and the protrusive columns.

An apparatus comprising a first substrate, a dam structure disposed on a first side of the first substrate, and an integrated circuit (IC) memory chip coupled to the first side of the first substrate by a plurality of first conductive members. A second substrate is coupled to a second side of the first substrate by a plurality of second conductive members. A lid coupled to the second substrate encloses the IC memory chip and the first substrate. A thermal interface material (TIM) is coupled between the lid and the dam structure.

A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

A substrate includes a ceramic tile and a three-dimensional (3D) conductive structure. The 3D conductive structure includes a planar base layer having a bottom surface bonded to a top surface of the ceramic tile, and a block disposed above the planar base layer. The block is monolithically integrated with the planar base layer. A top surface of the block is configured as a die attach pad. The planar base layer has a base vertical thickness from the top surface of the ceramic tile to a top surface of the planar base layer. The block and the planar base layer have a combined vertical thickness from the top surface of the ceramic tile to a top surface of the block that is greater than the base vertical thickness.

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate formed with a semiconductor device so as to cover the semiconductor device, wherein the first bonding layer includes a first metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, wherein the second bonding layer includes a second metal oxide material in an amorphous state; conducting a surface modification process on the first bonding layer and the second bonding layer; bonding the device substrate and the carrier substrate to each other through the first and second bonding layers; and annealing the first and second bonding layers so as to convert the first and second metal oxide materials from the amorphous state to a crystalline state.