A semiconductor package may include: a first wiring structure including a first wiring pattern and a first wiring insulating layer surrounding the first wiring pattern; a first semiconductor chip above the first wiring structure; a second semiconductor chip above the first wiring structure and spaced apart from the first semiconductor chip in a horizontal direction; an adhesive layer including a first portion on an upper surface of the first semiconductor chip, and further including a second portion on an upper surface of the second semiconductor chip; a molding member on the first wiring structure and surrounding side surfaces of each of the first semiconductor chip, the second semiconductor chip, and the adhesive layer; and a heat dissipation member on an upper surface of each of the molding member and the adhesive layer.

A chip packaging structure includes, a chip on a substrate; an enclosure structure on the chip, a wall of the enclosure structure comprises a sealed cavity, and the chip is revealed through the sealed cavity; a layer of thermal interface material for the chip, formed by filling a liquid metal into the sealed cavity of the wall of the enclosure structure; and a heat sink, formed on the layer of thermal interface material, is hermetically sealed to the wall of the enclosure structure. The heat sink component is formed on the layer of the thermal interface material, sealed and connected to the enclosure structure. The enclosure structure using flexible materials to prevent the liquid metal from overflowing in the encapsulation and application process, thereby reducing degradation. The UV curing adhesive is used for sealing and fixing the connection to the thermal interface material layer, so the disassembly and replacement of the process is simpler.

There is provided a thermally conductive grease containing: an alkenyl group-containing organopolysiloxane A having two or more alkenyl groups; an alkenyl group-containing organopolysiloxane B having two or more alkenyl groups; and a thermally conductive powder, in which viscosity A of the alkenyl group-containing organopolysiloxane A at 25 C. and a shear rate of 10 s.sup.1 is smaller than viscosity B of the alkenyl group-containing organopolysiloxane B at 25 C. and a shear rate of 10 s.sup.1, and a ratio (Ti value) of viscosity 1 at a shear rate 1 s.sup.1 to viscosity 10 at 25 C. and a shear rate of 10 s.sup.1 is 3.0 or more.

A method comprises: covering at least part of the integrated circuit with a material, the material including an opening that penetrates through the material; and forming a layer of nanoparticles on at least part of an internal wall of the opening and over at least part of the integrated circuit.

There are provided a thermosetting resin composition for semiconductor bonding and a thermosetting resin composition for light emitting device which have high thermal conductivity and an excellent heat dissipation property and are capable of reliable pressure-free bonding of a semiconductor element and a light emitting element to a substrate. A thermosetting resin composition comprising: (A) silver fine particles ranging from 1 nm to 200 nm in thickness or in minor axis; (B) a silver powder having an average particle size of more than 0.2 m and 30 m or less; (C) resin particles; and (D) a thermosetting resin, wherein an amount of the resin particles (C) is 0.01 to 1 part by mass and an amount of the thermosetting resin (D) is 1 to 20 parts by mass, to 100 parts by mass being a total amount of the silver fine particles (A) and the silver powder (B).

One aspect of the present disclosure pertains to a package structure. The package structure includes a die bonded to a substrate, where a plurality of first channels are formed on a top surface of the die; a lid bonded to the substrate and over the die; and a thermal interface material (TIM) disposed between and contacting the lid and the die, where the thermal interface material fills the first channels.

A package structure includes a package substrate, a semiconductor module on the package substrate, a composite thermal interface material (TIM) layer including liquid metal in a polymer matrix on the semiconductor module, a package lid on the composite TIM layer and attached to the package substrate, and a reactive interface layer in contact with the composite TIM layer on at least one of the semiconductor module or the package lid.

The present embodiment relates to a ball grid array package. A ball grid array package according to one aspect includes: a substrate; an IC chip being disposed on the substrate; a ball electrically connecting the substrate and the IC chip; and a reinforcement part being disposed on the IC chip.

Electronic structures and methods of assembly are described in which a lid with pocket sidewalls is mounted on a routing substrate such that the pocket sidewalls laterally surround an electronic component and provide a barrier to outflow of the thermal interface layer outside of the pocket sidewalls, and in particular a thermal interface layer including a liquid metal film.