Semiconductor devices including the use of solder materials and methods of manufacturing are provided. In embodiments the solder materials utilize a first tensile raising material, a second tensile raising material, and a eutectic modifier material. By utilizing the materials a solder material can be formed and used with a reduced presence of needles that may otherwise form during the placement and use of the solder material.

A conductive composition for bonding includes a mix of copper powder carboxylic acid. The carboxylic acid has a branched carbon chain. The copper powder comprises first and second copper particles. The first copper particles have a volume-based cumulative particle size D.sub.50 of 0.11 m or more and less than 1 m at a cumulative volume of 50 vol % in a region of particle sizes of less than 1 m in a particle size distribution of the copper powder. The second copper particles have a volume-based cumulative particle size D.sub.50 of 1 m or more and 10 m or less at a cumulative volume of 50 vol % in a region of particle sizes of 1 m or more in the particle size distribution of the copper powder. The carboxylic acid is contained in an amount of 6 parts or more and 24 parts or less per 100 parts by mass.