A method is disclosed for producing an array of parallel conductive lines in a first level of a multilevel interconnect structure of a semiconductor component. The lines are produced by direct etching (a conductive layer is produced), a hardmask line pattern is formed on the conductive layer and the line pattern is transferred to the conductive layer by etching the conductive layer relative to the hardmask lines. The hardmask lines are reduced in width prior to the pattern transfer. The width reduction is done at intended via locations. Local hardmask pillars are produced on the hardmask lines prior to the width reduction step, so that the original line width is maintained at the intended via locations. As a result, the width of the conductive lines obtained after the pattern transfer is smaller compared to conventional configurations, except in local areas corresponding to the locations of interconnect vias.

A method for manufacturing a semiconductor structure includes: forming first conducting portions that are spaced apart from each other on a base structure; forming isolation elements, each of which includes a dielectric lower portion and an etching-resistant upper portion covering the dielectric lower portion, the etching-resistant upper portion being made of an etching-resistant material different from a dielectric material of the dielectric lower portion, each of the isolation elements being isolated and exposed from two adjacent ones of the first conducting portions; sequentially forming an etch stop layer and an interlayer dielectric over the first conducting portions and the isolation elements; forming a cavity which extends through the etch stop layer and the interlayer dielectric, and which exposes one of the first conducting portions; and filling the cavity with a second conducting portion.

The technology of this application relates to a packaging module and a packaging method therefor, and an electronic device. The packaging module includes at least two device groups and a shielding structure configured to shield the at least two device groups. The shielding structure includes a partition structure configured to perform electromagnetic isolation between every two adjacent device groups. The partition structure includes a plurality of conductive pillars and conductive adhesive, and a conductivity of the conductive pillar is greater than a conductivity of the conductive adhesive. The plurality of conductive pillars are arranged at intervals and are electrically connected to a ground layer of a substrate, the conductive adhesive fills a gap between any adjacent conductive pillars, and any adjacent conductive pillars are electrically connected by using the conductive adhesive.

An interconnect structure is provided the includes a top electrically conductive via structure that is fully-aligned to a bottom electrically conductive line structure. The interconnect structure has a maximized contact area between the top electrically conductive via structure and the bottom electrically conductive line structure without metal fangs that are caused by over etching. The dielectric surface of the interconnect dielectric material layer that is adjacent to the top electrically conductive via structure is free of reactive ion etch (RIE) damage. Further, there is no line wiggling since the bottom electrically conductive line structure is formed by a substrative metal etch. Further, there is no via distortion since the via opening used to house the top electrically conductive via structure has a density and aspect ratio that are low enough to avoid via distortion.

Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a first metal feature in a dielectric layer and a capping layer over the first metal feature, selectively depositing a blocking layer over the capping layer, depositing an etch stop layer (ESL) over the workpiece, removing the blocking layer, and depositing a second metal feature over the workpiece such that the first metal feature is electrically coupled to the second metal feature. The blocking layer prevents the ESL from being deposited over the capping layer.

A method includes bonding an integrated circuit die to a carrier substrate, forming a gap-filling dielectric around the integrated circuit die and along the edge of the carrier substrate, performing a bevel clean process to remove portions of the gap-filling dielectric from the edge of the carrier substrate, after performing the bevel clean process, depositing a first bonding layer on the gap-filling dielectric and the integrated circuit die, forming a first dielectric layer on an outer sidewall of the first bonding layer, an outer sidewall of the gap-filling dielectric, and the first outer sidewall of the carrier substrate; and bonding a wafer to the first dielectric layer and the first bonding layer, wherein the wafer comprises a semiconductor substrate and a second dielectric layer on an outer sidewall of the semiconductor substrate.

A semiconductor device may include high-integrated memory cells, and a method for fabricating the semiconductor device may include forming a plurality of preliminary nano sheets disposed with first horizontal gaps therebetween over a substrate, forming a spacer layer surrounding portions of the preliminary nano sheets and defines second horizontal gaps between the preliminary nano sheets, forming gap-fill layers that fill the second horizontal gaps of the spacer layer, forming inter-cell dielectric layers on the gap-fill layers and the spacer layer, horizontally recessing the gap-fill layers and the spacer layer and forming a linear surrounding recess, and forming a conductive line horizontally extending while surrounding portions of the preliminary nano sheets in the linear surrounding recess.

A semiconductor device includes: a semiconductor substrate having first and second main surfaces; interlayer insulating films laminated on the first main surface in a thickness direction from the second main surface toward the first main surface; a top wiring arranged on a top interlayer insulating film of the plurality of interlayer insulating films, which is provided farthest from the first main surface in the thickness direction; and a passivation film arranged on the top interlayer insulating film so as to cover the top wiring. The top wiring includes a first wiring portion and a second wiring portion that extend in a first direction in plan view and are adjacent to each other in a second direction orthogonal to the first direction. A first distance between an upper surface of the top wiring and the top interlayer insulating film in the thickness direction is 2.7 m or more.

Embodiments of the present disclosure provide a semiconductor structure including a first metal contact, where at least a portion of the first metal contact extends vertically from a substrate to a top portion of the semiconductor structure. The first metal contact having an exposed surface at the top portion of the semiconductor structure. A dielectric cap may be configured around the first metal contact. The dielectric cap is configured to electrically separate a first area of the semiconductor structure from a second area of the semiconductor structure. The first area of the semiconductor structure includes the first metal contact.

A metallic stack and a preparing method therefor, and an electronic device including the metallic stack. The metallic stack includes at least one interconnection wire layer and at least one via layer alternately arranged on a substrate. At least one pair of interconnection wire layer and via layer in the metallic stack includes interconnection wires in the interconnection wire layer and conductive vias in the via layer, wherein the interconnection wire layer is closer to the substrate than the via layer. At least a part of the interconnection wires is integrated with the conductive vias on the at least a part of the interconnection wires.