Systems, devices, and methods for high die stack packages with vertical die-to-die interconnects are provided herein. A die stack package can include a substrate, a lower die stack carried by the substrate, a spacer carried by the substrate, an upper die stack carried by the spacer, a plurality of wire bonds, and a plurality of vertical wires. The lower die stack can include a plurality of lower dies stacked in a cascading arrangement. The upper die stack can include a plurality of upper dies stacked in a cascading arrangement in a same direction as the plurality of lower dies. The wire bonds can electrically couple adjacent ones of the lower dies. An nth vertical wire can extend vertically between and electrically couple an nth upper die and an nth lower die. In some embodiments, the die stack package further includes an input-and-output extender carried by the substrate.

A semiconductor package includes a package substrate, a processor chip mounted on a first region of the package substrate, a plurality of memory chips mounted on a second region of the package substrate being spaced apart from the first region of the package substrate, a signal transmission device mounted on a third region of the package substrate between the first and second regions of the package substrate, and a plurality of first bonding wires connecting the plurality of memory chips to the signal transmission device. The signal transmission device includes upper pads connected to the plurality of first bonding wires, penetrating electrodes arranged in a main body portion of the signal transmission device and connected to the upper pads, and lower pads in a lower surface portion of the signal transmission device and connected to the penetrating electrodes and connected to the package substrate via bonding balls.

In some examples, a semiconductor package comprises an electrically conductive surface and a bond wire coupled to the electrically conductive surface. The bond wire includes a first stitch bond coupled to the electrically conductive surface, and a second stitch bond contiguous with the first stitch bond and coupled to the electrically conductive surface. The second stitch bond is partially, but not completely, overlapping with the first stitch bond.

Semiconductor module including a semiconductor and including a shaped metal body that is electrically contacted by the semiconductor, for forming a contact surface for an electrical conductor, wherein the shaped metal body is bent or folded. A method is also described for establishing electrical contacting of an electrical conductor on a semiconductor, said method including the steps of: fastening a bent or folded shaped metal body of a constant thickness to the semiconductor by means of a first fastening method and then fastening the electrical conductor to the shaped metal body by means of a second fastening method.

A copper interconnect structure for an integrated circuit chip is provided for forming a good electrical solder connection with a large-sized metal wire easily. The copper interconnect structure includes a copper surface, a metal barrier layer, and a weldable metal layer. The weldable metal layer is formed with a thickness ranging from 0.03 micrometers to 0.05 micrometers over the metal barrier layer.