A semiconductor assembly, a packaging structure, and associated method for corner stress reduction in semiconductor devices. The assembly includes a plurality of semiconductor dies and a plurality of spacers. Each spacer in the plurality of spacers is disposed between and configured to separate two semiconductor dies in the plurality of semiconductor dies. At least one spacer in the plurality of spacers has at least one extended spacer corner feature configured to extend toward at least one corner of at least one semiconductor die in the plurality of semiconductor dies disposed adjacent to the at least one spacer. At least one extended spacer corner feature is configured to reduce stress on at least one semiconductor die.

Implementations of a semiconductor package may include two or more die, each of the two more die coupled to a metal layer at a drain of each of the two more die, the two or more die and each metal layer arranged in two parallel planes; a first interconnect layer coupled at a source of each of the two more die; a second interconnect layer coupled to a gate of each of the two or more die and to a gate package contact through one or more vias; and an encapsulant that encapsulates the two or more die and at least a portion of the first interconnect layer, each metal layer, and the second interconnect layer.

A semiconductor device has a leadframe and a first electrical component disposed over the leadframe. A clip bond is disposed over the first electrical component. The clip bond has a plurality of recesses each having a different depth. A first recess is proximate to a first distal end of the first electrical component, and a second recess is proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component. A depth of the first recess is different from a depth of the second recess. A third recess is over a surface of the first electrical component. A depth of the third recess is different from the depth of the first recess and the depth of the second recess. A second electrical component is disposed over the leadframe. The clip bond extends over the second electrical component.

A power semiconductor device according to the present invention is provided with: a first circuit body constituting an upper arm of an inverter circuit for converting a DC current into an AC current; a second circuit body constituting a lower arm of the inverter circuit; and a circuit board that has therein a through-hole in which the first circuit body and the second circuit body are disposed and that has an intermediate board between the first circuit body and the second circuit body. The intermediate board has an AC wiring pattern for transmitting the AC current, and the first circuit body and the second circuit body are connected to the AC wiring pattern so as to be in surface contact with the AC wiring pattern.

A semiconductor apparatus includes a substrate, a semiconductor device arranged on an upper surface of the substrate, a lead frame bonded to an upper surface of the semiconductor device via a bonding material, the lead frame having a first recess on an upper surface thereof, a wire connected to the first recess, and a resin that seals the substrate, the semiconductor device, the lead frame, and the wire.

A semiconductor device semiconductor chip mounted to a leadframe that includes an electrically conductive pad. An electrically conductive clip is arranged in a bridge-like position between the semiconductor chip and the electrically conductive pad. The electrically conductive clip is soldered to the semiconductor chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor chip and the electrically conductive pad. The device further includes a pair of complementary positioning formations formed by a cavity in the electrically conductive clip and a protrusion (such as a stud bump or a stack of stud bumps) formed in the electrically conductive pad. The complementary positioning formations are mutually engaged to retain the electrically conductive clip in the bridge-like position to avoid displacement during soldering.

A semiconductor device includes: a first lead including a base portion; a semiconductor element mounted on a first side of the base portion in the thickness direction and including a first electrode; a second lead spaced apart from the base portion in a first direction perpendicular to the thickness direction; a first conductive member electrically bonded to the first electrode and the second lead; and a sealing resin. The first conductive member includes a first portion bonded to the first electrode via a conductive first bonding layer. The first portion includes a first surface and a second surface respectively facing the first side and a second side in the thickness direction. The first portion includes a plurality of first recesses that are recessed from the first surface and a plurality of second recesses that are recessed from the second surface.

A semiconductor device includes a heat sink, a base material including an insulating layer and mounted on the heat sink on one side in a first direction, a first conductive layer bonded to the base material and located on a side opposite the heat sink with respect to the base material, a first semiconductor element bonded to the first conductive layer, a first power terminal electrically connected to the first conductive layer and the first semiconductor element, and a sealing resin covering the first conductive layer and the first semiconductor element. The first power terminal is exposed from the sealing resin. The first power terminal is surrounded by a peripheral edge of the sealing resin as viewed in the first direction.

A semiconductor module includes a laminate substrate including an insulating plate and first and second circuit boards on an upper surface of the insulating plate, the first semiconductor device on an upper surface of the first circuit board, a first main terminal, and a first metal wiring board that electrically connects the first semiconductor device to the first main terminal. The first metal wiring board has a first bonding section bonded to an upper surface electrode of the first semiconductor device, a second bonding section bonded to an upper surface of the second circuit board, a first coupling section that couples the first bonding section to the second bonding section, a first raised section that rises upward from an end portion of the second bonding section. The first raised section has an upper end that is electrically connected to the first main terminal.

A copper paste for joining contains metal particles and a dispersion medium, in which the copper paste for joining contains copper particles as the metal particles, and the copper paste for joining contains dihydroterpineol as the dispersion medium. A method for manufacturing a joined body is a method for manufacturing a joined body which includes a first member, a second member, and a joining portion that joins the first member and the second member, the method including: a first step of printing the above-described copper paste for joining to at least one joining surface of the first member and the second member to prepare a laminate having a laminate structure in which the first member, the copper paste for joining, and the second member are laminated in this order; and a second step of sintering the copper paste for joining of the laminate.