The present disclosure relates to power modules, methods for manufacturing same, and electrical systems. A power module is provided, comprising one or more power module units each comprising: an intra-cooling device formed of an insulating material; a first metal layer disposed on a top surface of the intra-cooling device; a first chip attached on the first metal layer, the first chip being electrically coupled by the first metal layer and at least one of a first conductive clip and a first conductive wire attached on the first chip and the first metal layer; a second metal layer disposed on a bottom surface of the intra-cooling device; and a second chip attached on the second metal layer, the second chip being electrically coupled by the second metal layer and at least one of a second conductive clip and a second conductive wire attached on the second chip and the second metal layer.

A clip-bonded semiconductor package including: a semiconductor die including a bond pad on a top side of the semiconductor die, the bond pad is arranged to receive a bond clip, the bond clip is also arranged to provide electrical connection to the bond pad via a connection part of the bond clip, the bond clip further includes a buffer layer provided to at least the connection part. A hardness of a material of the buffer layer is lower than a hardness of a material of the bond clip.

A package includes a semiconductor die disposed on a lead frame. A source contact pad is disposed on the semiconductor die. The package further includes a lead post shared by a plurality of leads that form external terminals of the package. The lead post has a clip-locking feature. A clip connects the source contact pad to the lead post. The clip has a key structure coupled to the clip-locking feature in the lead post.

A electrical connection element includes a planar mating surface adapted for mating with a metal bonding surface, a rim that forms an enclosed shape around the planar mating surface, and a plurality of outgassing grooves formed in the planar mating surface, wherein each of the outgassing grooves comprises a proximal end that is spaced apart from the rim and a distal end that intersects the rim, and wherein a cross-sectional area of each of the outgassing grooves increases along a lengthwise direction going from the proximal end to the distal end.

A semiconductor device includes: a leadframe having a die pad, first leads and second leads, the second leads being connected with a leadpost; a first lateral transistor die having a first pad, second pad and third pad; a first clip, configured to connect the first pad to the die pad, which is connected with the first leads; and a second clip, configured to connect the second pad to the leadpost of the second leads), the leadpost being disconnected from the die pad. The second clip includes a first section contacting the second pad of the first lateral transistor die, a second section contacting the leadpost of the second leads, and a middle section between the first and the second sections. The middle section has partly a smaller width than the second section.

A semiconductor package and method are disclosed. In one example, the semiconductor package includes a package body. A first diepad is at least partially uncovered by the package body at the first main surface. A second diepad is at least partially uncovered by the package body at the first main surface. A first semiconductor chip is arranged on the first diepad. A second semiconductor chip is arranged on the second diepad. The semiconductor package further includes at least one lead protruding out of the package body at the side surface. A first groove and a second groove are formed in the first main surface. The method includes a method of making the semiconductor package.

A semiconductor package, a method of manufacturing thereof, and a lead frame are provided, the package includes the lead frame and a die pad and a bond clip. The lead frame exhibits a longitudinal and a transverse dimension perpendicular to the longitudinal dimension. The package includes a die having a first die side mounted to the die pad mounting portion and a second die side opposite to the first, and a bond clip exhibiting a first and second longitudinal dimension perpendicular to the first longitudinal dimension. The bond clip has a first clip mounted to the bond clip of the lead frame using solder and a second clip mounted to the second die side of the die, the bond clip of the lead frame has features to prevent displacement of the bond clip in both the longitudinal and transverse dimension, and to confine the solder on the bond clip.

In a general aspect, a semiconductor device assembly includes a conductive member, a conductive adhesive disposed on the conductive member, and a semiconductor die disposed on the conductive adhesive. The conductive adhesive couples the semiconductor die with the conductive member. The device assembly further includes a barrier included in the conductive member. The barrier is proximate to an edge of the semiconductor die and configured to inhibit outflow of the conductive adhesive.

A package includes an at least partially electrically conductive front-side connection body and an electronic component having an epitaxial layer and being assembled with the front-side connection body. A distance between the epitaxial layer and the front-side connection body is less than 50 m. A method of manufacturing the package is also described.