Apparatus and techniques are described herein for use in manufacturing electronic devices, such as can include organic light emitting diode (OLED) devices. Such apparatus and techniques can include using one or more modules having a controlled environment. For example, a substrate can be received from a printing system located in a first processing environment, and the substrate can be provided a second processing environment, such as to an enclosed thermal treatment module comprising a controlled second processing environment. The second processing environment can include a purified gas environment having a different composition than the first processing environment.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a thermal treatment chamber coupled with the first transfer chamber. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a metal deposition chamber coupled with the second transfer chamber.

Provided is a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing on a plurality of substrates in a process chamber defining a plurality of processing spaces. The substrate processing apparatus includes a process chamber in which N processing spaces are defined to process substrates, N gas injection units installed above the process chamber to respectively correspond to the N processing spaces, N substrate supports that face the gas injection units and support the substrates, a transfer support installed in the process chamber to support the substrates, a rotation support which is installed between the adjacent substrate supports that are substrate transfer paths according to rotation driving of the transfer support and on which the substrates are seated to be rotated about a vertical second rotation axis passing through the substrates.

Plasma processing apparatuses, substrate bonding systems, and substrate bonding methods are provided. The plasma processing apparatus includes a plasma process chamber that includes a process space, a load-lock chamber connected to the process space, a first vacuum pump that adjusts a pressure of the load-lock chamber, a process gas supply that supplies the process space with a process gas, and an H.sub.2O supply that supplies the process space with H.sub.2O. The plasma process chamber includes a chuck that supports a substrate and a plasma electrode to which a radio-frequency (RF) power is applied.

A substrate treatment line is disclosed. The substrate treatment line may include a chamber portion including a plurality of treatment chambers stacked in a vertical direction, and a vertical return robot, including a plurality of gripping portions, to transfer a plurality of substrates in a vertical direction simultaneously and load or unload the substrates to the treatment chambers.

A degassing chamber for degassing a material located on a workpiece, comprises a vacuum source and a vacuum reservoir in fluid communication with the vacuum source, a secondary chamber, a port valve which is movable between an open position to allow passage of a workpiece therethrough between the exterior of the degassing chamber and the secondary chamber and a closed position in which the port valve is fluidly sealed, and a reservoir valve which is movable between an open position to provide fluid communication between the secondary chamber and the vacuum reservoir and a closed position in which the reservoir valve is fluidly sealed. The degassing chamber may be provided subsequent to a printing machine in a production line, and has particular application for degassing silicone material when producing fuel cells.

Molybdenum is etched in a highly controllable manner by performing one or more etch cycles, where each cycle involves exposing the substrate having a molybdenum layer to an oxygen-containing reactant to form molybdenum oxide followed by treatment with boron trichloride to convert molybdenum oxide to a volatile molybdenum oxychloride with subsequent treatment of the substrate with a fluorine-containing reactant to remove boron oxide that has formed in a previous reaction, from the surface of the substrate. In some embodiments the method is performed in an absence of plasma and results in a substantially isotropic etching. The method can be used in a variety of applications in semiconductor processing, such as in wordline isolation in 3D NAND fabrication.

Disclosed is an apparatus for processing a substrate and an apparatus for transferring a substrate. The apparatus for processing the substrate includes: an index module including a load port on which a container containing a substrate is placed and an index robot that loads or unloads a substrate into or from the container placed on the load port; and a processing module for processing the substrate transferred from the container placed on the index module, in which the processing module includes: a buffer unit on which the substrate is placed temporarily; and a main transfer robot for transferring the substrate between the buffer unit and a processing chamber that processes the substrate, the index robot is provided to approach the buffer unit, and the buffer unit includes: a plurality of buffers which is stacked on each other and supports the substrate; and an interval changing unit for changing an interval between adjacent buffers among the buffers.

The substrates supported in substrate holders are carried on holder carriers in a manner, that their extended surfaces are exposed to the surrounding atmosphere along an extended surface of the holder carriers. The holder carriers include an axis traverse to their extended surface. The substrates on a holder carrier are vacuum treated in a vacuum treatment chamber. This chamber communicates via a gate valve with a transfer vacuum chamber. A holder carrier with substrates in the vacuum treatment chamber is exchanged with a holder carrier carrying untreated substrates from the transfer vacuum chamber 23 by means of an exchange robot. During treatment in the vacuum treatment chamber, holder carriers with treated substrates and holder carriers with untreated substrates are exchanged in the transfer vacuum chamber through a gate valve. The transfer vacuum chamber acts as a load-lock.