A method of repairing a display panel and a repaired display panel are provided. The display panel includes a panel substrate, a plurality of micro LEDs arranged on the panel substrate, and a molding member covering the plurality of micro LEDs. The molding member includes a first molding member and a second molding member disposed in a region surrounded by the first molding member. The second molding member has a composition or a shape different from that of the first molding member, and the second molding member surrounds at least one side surface of the plurality of micro LEDs.

An apparatus comprising a first substrate, a dam structure disposed on a first side of the first substrate, and an integrated circuit (IC) memory chip coupled to the first side of the first substrate by a plurality of first conductive members. A second substrate is coupled to a second side of the first substrate by a plurality of second conductive members. A lid coupled to the second substrate encloses the IC memory chip and the first substrate. A thermal interface material (TIM) is coupled between the lid and the dam structure.

Systems and methods plasma dicing are provided. The method includes forming a mask layer on a first surface of a wafer. The mask layer includes scribe lines and the wafer is diced along the scribe lines. The method also includes forming a die attach layer of a photo patternable material on a second surface of the wafer opposite the first surface. The method further includes patterning the die attach layer to form a number of openings in the die attach layer in a predetermined pattern. The method yet further includes applying a dicing tape to the die attach layer. The method includes dicing the wafer along the scribe lines to form dies of a plurality of dies supported by the dicing tape, a die of the plurality of dies having the die attach layer of the photo patternable material.

Various embodiments of the present disclosure are directed towards a method. The method includes providing a first semiconductor workpiece and a second semiconductor workpiece onto a platform. A plurality of positioning structures move the second semiconductor workpiece over the first semiconductor workpiece while moving from a plurality of reference positions to a plurality of first positions. A bonding apparatus is operated to bond the second semiconductor workpiece to the first semiconductor workpiece. The positioning structures are moved from the plurality of reference positions to a plurality of second positions. The positioning structures physically contact an outer perimeter of the first semiconductor workpiece and/or an outer perimeter of the second semiconductor workpiece while at the plurality of second positions. A shift value is determined between the first semiconductor workpiece and the second semiconductor workpiece based on a comparison between the plurality of first positions and the plurality of second positions.