Implementations of a semiconductor package may include two or more die, each of the two more die coupled to a metal layer at a drain of each of the two more die, the two or more die and each metal layer arranged in two parallel planes; a first interconnect layer coupled at a source of each of the two more die; a second interconnect layer coupled to a gate of each of the two or more die and to a gate package contact through one or more vias; and an encapsulant that encapsulates the two or more die and at least a portion of the first interconnect layer, each metal layer, and the second interconnect layer.

Methods and apparatus for processing a substrate include sputtering a first seed layer having a first thickness on the substrate, the first seed layer comprising a thermal interface material having a tilted crystallographic orientation with respect to the substrate; sputtering a second layer having a second thickness on the first seed layer, the second layer comprising the thermal interface material; and polishing the second layer until a surface roughness of the second layer is suitable for at least one of fusion bonding, thermal compression bonding, or hybrid bonding.

Capacitive couplings in a direct-bonded interface for microelectronic devices are provided. In an implementation, a microelectronic device includes a first die and a second die direct-bonded together at a bonding interface, a conductive interconnect between the first die and the second die formed at the bonding interface by a metal-to-metal direct bond, and a capacitive interconnect between the first die and the second die formed at the bonding interface. A direct bonding process creates a direct bond between dielectric surfaces of two dies, a direct bond between respective conductive interconnects of the two dies, and a capacitive coupling between the two dies at the bonding interface. In an implementation, a capacitive coupling of each signal line at the bonding interface comprises a dielectric material forming a capacitor at the bonding interface for each signal line. The capacitive couplings result from the same direct bonding process that creates the conductive interconnects direct-bonded together at the same bonding interface.

Methods for die attachment of multichip and single components may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

A method for fabricating a semiconductor wafer may etch a surface of a silicon substrate to form a first cavity and a second cavity. The method may apply a first dielectric layer to the surface of the silicon substrate, the first cavity, and the second cavity. The method may affix a first die into the first cavity of the silicon substrate. The method may affix a second die into the second cavity of the silicon substrate. The method may apply a second dielectric layer to the surface of the silicon substrate, an exposed surface of the first die, and an exposed surface of the second die. The method may form a redistribution layer over the second dielectric layer, where the redistribution layer is configured to electrically couple the first die to the second die.

A semiconductor device includes: a multilayered wiring layer including an insulation layer (30) and a diffusion prevention layer (21, 22, 23, 24) stacked alternately and including a wiring layer (11, 12, 13) internally; a gap section (50) disposed at least in a portion of the insulation layer (30); and a support section (60) disposed at least in a portion of the gap section (50) and configured to support the multilayered wiring layer.

A method of dispensing an underfill material on a semiconductor device package. A substrate having a semiconductor chip electrically connected thereto and offset from the substrate by solder joints is provided. The semiconductor chip has a footprint defined by a length and width of the semiconductor chip. Standoff heights between the substrate and the semiconductor chip are calculated and used to determine a volume of underfill material needed to substantially fill a space between the substrate and the semiconductor chip. The determined volume of underfill material is dispensed on the substrate such that the space between the substrate and the semiconductor chip is substantially filled by the underfill material. The method may allow for improved dispensing an underfill material to substantially fill the space between the substrate and semiconductor chip when variations in standoff height are present.

A semiconductor die stack includes a first semiconductor die having a first lattice direction, and a second semiconductor die bonded to the first semiconductor die and having a second lattice direction different than the first lattice direction.

A method for fabricating a package structure is provided. The method includes forming a metal layer over a carrier substrate. The method includes forming a dielectric layer over the metal layer. The method includes forming a plurality of first openings in the dielectric layer. The method includes forming a plurality of second openings in the dielectric layer. The first openings and the second openings expose the metal layer. The method includes forming a conductive material in the first openings and the second openings to form a plurality of conductive features. The method includes removing the metal layer and the carrier substrate. The method includes thinning the dielectric layer around the conductive features. The method also includes bonding a package component to the conductive features.

A bonded substrate structure includes a first substrate; a second substrate; and a bonding region bonding the first substrate to the second substrate. The bonding region includes an aluminum oxide bonding layer directly contacting an aluminum nitride layer, and a bonding interface between the aluminum oxide bonding layer and a bonding surface of the first substrate or the second substrate.