A package includes a substrate, a first package component, second package components and a supporting structure. The first package component and the second package components are bonded to the substrate. The second package components are electrically connected to the first package component. Each of the second package components includes a n optical coupler. The supporting structure is attached on the substrate. At least a portion of the supporting structure is laterally located between the first package component and the second package components.

A semiconductor package includes a photonic die including an optical coupler, an electronic die bonded over the photonic die, and a optical support bonded over the electronic die and includes a plurality of lens structures, wherein light from an external optical signal source is coupled to the optical coupler sequentially through the plurality of lens structures.

A die flip bonding device includes a substrate holder configured to provide a substrate including a plurality of die stacks having a gap in a first direction, the plurality of die stacks being wire-bonded; a first moving body configured to move to a first position to pick up a first uppermost die of a first die stack, among the plurality of die stacks, and then half-flip the first uppermost die in the first direction to move the first uppermost die to a second position; and a second moving body configured to move to the second position to receive the first uppermost die of the first die stack from the first moving body, and after the movement of the first moving body, half-flip the first uppermost die of the first die stack in the first direction at the second position to move the first uppermost die to a third position.

A bonding structure includes a first member and a second member. The first member includes a first layer mainly composed of a first metal. The second member includes a second layer mainly composed of a second metal different from the first metal. In the bonding structure, the first layer of the first member and the second layer of the second member are solid-phase bonded. As an example, the first metal is Cu, and the second metal is Ag. As another example, the first metal is Cu, and the second metal is Au. As a still another example, the first metal is Au, and the second metal is Ag.

A method for manufacturing sinter bonding film, includes: preparing a resin formulation; preparing a metal filler mixture; mixing the resin formulation and the metal filler mixture, thereby preparing a paste for film manufacturing; and manufacturing a sinter bonding film by using the paste for film manufacturing. The metal filler mixture includes a metal powder and a reducing agent, copper metal (Cu) corresponds to respective particles in the metal powder, and the surface of the respective particles in the metal powder undergoes acid treatment or non-treatment.

Semiconductor module including a semiconductor and including a shaped metal body that is electrically contacted by the semiconductor, for forming a contact surface for an electrical conductor, wherein the shaped metal body is bent or folded. A method is also described for establishing electrical contacting of an electrical conductor on a semiconductor, said method including the steps of: fastening a bent or folded shaped metal body of a constant thickness to the semiconductor by means of a first fastening method and then fastening the electrical conductor to the shaped metal body by means of a second fastening method.

Direct-bonded optoelectronic interconnects for high-density integrated photonics are provided. A combined electrical and optical interconnect enables direct-bonding of fully-processed optoelectronic dies or wafers to wafers with optoelectronic driver circuitry. The photonic devices may be III-V semiconductor devices. Direct-bonding to silicon or silicon-on-insulator (SOI) wafers enables the integration of photonics with high-density CMOS and other microelectronics packages. Each bonding surface has an optical window to be coupled by direct-bonding. Coplanar electrical contacts lie to the outside, or may circumscribe the respective optical windows and are also direct-bonded across the interface using metal-to-metal direct-bonding, without interfering with the optical windows. Direct hybrid bonding can accomplish both optical and electrical bonding in one overall operation, to mass-produce mLED video displays. The adhesive-free dielectric-to-dielectric direct bonding and solder-free metal-to-metal direct bonding creates high-density electrical interconnects on the same bonding interface as the bonded optical interconnect. Known-good-dies may be used, which is not possible conventionally, and photolithography over their top surfaces can scale to high density.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface with first conductive contacts and an opposing second surface with second conductive contacts, in a first layer; a die attach film (DAF), at the first surface of the first die, including through-DAF vias (TDVs), wherein respective ones of the TDVs are electrically coupled to respective ones of the first conductive contacts; a conductive pillar in the first layer; and a second die, in a second layer on the first layer, wherein the second die is electrically coupled to the second conductive contacts on the second surface of the first die and electrically coupled to the conductive pillar.

A coating process of a coating liquid using a nozzle is performed on a coating target structure including a semiconductor element and a wire bonded to the semiconductor element by a wire bonding process. The nozzle has a transport wind generating function of generating a liquid transport wind in a spiral manner. Thus, the coating liquid discharged from the coating liquid supply port of the nozzle is supplied to the coating target structure along the directivity of the liquid transport wind. Then, a drying process is performed on the coating target structure to form a primary layer containing a silane coupling agent as a constituent material on an outer periphery of the wire.

Atomic diffusion bonding is carried out using a bonding film comprising a nitride formed at a bonding surface. Operating in a vacuum chamber, a bonding film comprising a nitride is formed on each of flat surfaces of two substrates that each have the flat surface, and, by overlapping the two substrates so the bonding films formed on the two substrates are in contact with each other, the two substrates are joined by the generation of atomic diffusion at a bonding interface between the bonding films.