An electronic device which can suppress peeling off and damaging of the bonding material is provided. The electronic device includes an electronic component, a mounting portion, and a bonding material. The electronic component has an element front surface and an element back surface separated in the z-direction. The mounting portion has a mounting surface opposed to the element back surface on which the electronic component is mounted. The bonding material bonds the electronic component to the mounting portion. The bonding material includes a base portion and a fillet portion. The base portion is held between the electronic component and the mounting portion in the z-direction. The fillet portion is connected to the base portion and is formed outside the electronic component when seen in the z-direction. The electronic component includes two element lateral surface and ridges. The ridges are intersections of the two element lateral surface and extend in the z-direction. The fillet portion includes a ridge cover portion which covers at least a part of the ridges.

A method for manufacturing a semiconductor structure includes: forming a device portion and a front interconnect portion on a base substrate; forming a first bonding part on the front interconnect portion opposite to the device portion, the first bonding part including a first bonding layer and heat-dissipating elements formed in the first bonding layer, a thermal resistance of the heat-dissipating elements being smaller than a thermal resistance of the first bonding layer; forming a second bonding part on a carrier substrate; and performing a bonding process to bond the second bonding part to the first bonding part.

[Problem] To prevent formation of residues of a second adhesive on a semiconductor wafer during debonding by ensuring a low adhesion between a second support and the semiconductor wafer to prevent the two from adhering together too firmly while preventing bonding failure of a first support, even when the second support is bonded to a second surface of the semiconductor wafer.

[Means to Solve Problem] A substrate bonding device 1 includes: a bonder 10 that bonds a second support 110 to a second surface Sb, which is on an opposite side to a first surface Sa of a semiconductor wafer W, via a second adhesive 60, with the first surface Sa having a first support 100 bonded thereto at a first temperature via a first adhesive 50; and a heater 20 that heats one or both of the second support 110 and the semiconductor wafer W at a second temperature that is lower than the first temperature.

A self-densifying interconnection is formed between a high-temperature semiconductor device selected from a GaN or SiC-based device and a substrate. The interconnection includes a matrix of micron-sized silver particles in an amount from approximately 10 to 60 weight percent; the micron-sized silver particles having a particle size ranging from approximately 0.1 microns to 15 microns. Bonding particles are used to chemically bind the matrix of micron-sized silver particles. The bonding particles are core silver nanoparticles with in-situ formed surface silver nanoparticles chemically bound to the surface of the core silver nanoparticles and, at the same time, chemically bound to the matrix of micron-sized silver particles. The bonding particles have a core particle size ranging from approximately 10 to approximately 100 nanometers while the in-situ formed surface silver nanoparticles have a particle size of approximately 3-9 nanometers.

A method and apparatus for low temperature laser sealing of bonded articles is disclosed. Hermetic sealing of glass substrates using low temperature sealing techniques that do not adversely affect bulk strength of glass substrates, the environment created between the substrates and/or any components housed within the sealed glass substrates is disclosed. Such low temperature sealing techniques include use of localized laser heating of sealing materials to form a hermetic seal between glass substrates that does not involve heating the entire article to be sealed.

A sintering apparatus for simultaneously sintering an electronic device onto a substrate, and a metallic sheet onto the electronic device includes a sinter tool and a compressible film positionable onto the metallic sheet and the electronic device. A thickness of the compressible film is greater than a height of the metallic sheet. The compressible film is adapted to conform to a shape of the metallic sheet and the electronic device to simultaneously cover the metallic sheet and at least a part of the electronic device when the sinter tool applies a sintering force onto the compressible film during a sintering process.

A method of forming a bonded device. The method may include providing a carrier substrate, forming, on a first surface of the carrier substrate, a first bonding layer for bonding to a device substrate, and annealing the first bonding layer at a temperature of greater than 600 C.

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate, the first bonding layer including a first bonding sub-layer and a second bonding sub-layer, the first bonding sub-layer including a first metal oxide material in an amorphous state and a plurality of metal nanoparticles, the second bonding sub-layer including a second metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, the second bonding layer including a third metal oxide material in an amorphous state; conducting a surface modification process on the first and second bonding layers; bonding the device and carrier substrates to each other through the first and second bonding layers; and annealing the first and second bonding layers to convert the first, second, and third metal oxide materials from the amorphous state to a crystalline state.

Various embodiments of the present disclosure are directed towards a method. The method includes providing a first semiconductor workpiece and a second semiconductor workpiece onto a platform. A plurality of positioning structures move the second semiconductor workpiece over the first semiconductor workpiece while moving from a plurality of reference positions to a plurality of first positions. A bonding apparatus is operated to bond the second semiconductor workpiece to the first semiconductor workpiece. The positioning structures are moved from the plurality of reference positions to a plurality of second positions. The positioning structures physically contact an outer perimeter of the first semiconductor workpiece and/or an outer perimeter of the second semiconductor workpiece while at the plurality of second positions. A shift value is determined between the first semiconductor workpiece and the second semiconductor workpiece based on a comparison between the plurality of first positions and the plurality of second positions.

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate formed with a semiconductor device so as to cover the semiconductor device, wherein the first bonding layer includes a first metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, wherein the second bonding layer includes a second metal oxide material in an amorphous state; conducting a surface modification process on the first bonding layer and the second bonding layer; bonding the device substrate and the carrier substrate to each other through the first and second bonding layers; and annealing the first and second bonding layers so as to convert the first and second metal oxide materials from the amorphous state to a crystalline state.