A laminated structure includes a cooling member; a circuit board provided on the cooling member and having a through hole; a device provided on the circuit board and including a quantum bit; and a bonding material configured to bond together the circuit board and the device. The bonding material includes a first bonding portion contacting a portion of an upper surface of the cooling member exposed from the through hole, an upper surface of the circuit board, and a lower surface of the device; and a second bonding portion provided around the first bonding portion in plan view and contacting the upper surface of the circuit board and the lower surface of the device. A thermal conductivity of the first bonding portion is higher than that of the second bonding portion. An elastic modulus of the second bonding portion is lower than that of the first bonding portion.

A system and method for forming a bonded integrated circuit, comprising dispensing a dielectric material on a first side of an integrated circuit, shaping the dielectric material on the first side of the integrated circuit to form a first dielectric surface; and dispensing a conductive material between a first printed circuit board (PCB) top surface and a top surface of the integrated circuit to form a first connection, the first connection situated on the first dielectric surface.

There are provided a thermosetting resin composition for semiconductor bonding and a thermosetting resin composition for light emitting device which have high thermal conductivity and an excellent heat dissipation property and are capable of reliable pressure-free bonding of a semiconductor element and a light emitting element to a substrate. A thermosetting resin composition comprising: (A) silver fine particles ranging from 1 nm to 200 nm in thickness or in minor axis; (B) a silver powder having an average particle size of more than 0.2 m and 30 m or less; (C) resin particles; and (D) a thermosetting resin, wherein an amount of the resin particles (C) is 0.01 to 1 part by mass and an amount of the thermosetting resin (D) is 1 to 20 parts by mass, to 100 parts by mass being a total amount of the silver fine particles (A) and the silver powder (B).

A solder reflow system may include a solder reflow apparatus, a condensation apparatus and a cleaning apparatus. The solder reflow apparatus may be configured to reflow a solder of a semiconductor package using a heat transfer fluid. The condensation apparatus may be configured to receive the semiconductor package processed by the solder reflow apparatus. The condensation apparatus may condensate a gas generated from the heat transfer fluid to convert the gas into a liquid. The cleaning apparatus may be configured to clean the semiconductor package processed by the condensation apparatus using a cleaning agent. Thus, the heat transfer fluid stained with the semiconductor package may be removed by the condensation apparatus so that the heat transfer fluid may not be introduced into the cleaning apparatus. As a result, the heat transfer fluid may not be mixed with the cleaning agent to maintain cleaning capacity of the cleaning agent.

The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a substrate, an electronic element, an underfill layer, and a protective structure. The electronic element is disposed on the substrate. At least a portion of the underfill layer is disposed between the substrate and the electronic element. A thickness of the underfill layer is not greater than a height from a surface of the substrate to an upper surface of the electronic element. The protective structure is disposed on the substrate and adjacent to the underfill layer. The electronic device and the manufacturing method thereof of the disclosure may effectively control an area of the underfill layer.

A first chip mounting portion and a third chip mounting portion are electrically connected to each other via a first resistor element, and a second chip mounting portion and the third chip mounting portion are electrically connected to each other via a second resistor element.

The disclosure is directed to wide band-gap semiconductor devices, such as power devices based on silicon carbide or gallium nitride materials. A power device die is attached to a carrier substrate or a base using sintered silver as a die attachment material or layer. The carrier substrate is, in some embodiments, copper plated with silver. The sintered silver die attachment layer is formed by sintering silver nanoparticle paste under a very low temperature, for example, lower than 200 C. and in some embodiments at about 150 C., and with no external pressures applied in the sintering process. The silver nanoparticle is synthesized through a chemical reduction process in an organic solvent. After the reduction process has completed, the organic solvent is removed through evaporation with a flux of inert gas being injected into the solution.

The disclosure relates to a display device and an anisotropic conductive film. An anisotropic conductive film disposed between a display panel and a printed circuit board, the anisotropic conductive film including a base resin, a plurality of first conductive balls dispersed in the base resin, each of the plurality of first conductive balls including a core made of a polymer material and at least one metal layer surrounding the core, and a plurality of second conductive balls dispersed in the base resin, each of the plurality of second conductive balls being made of a meltable material, and the anisotropic conductive film having a first area in which the anisotropic conductive film overlaps the first pad electrode and the first lead electrode in a thickness direction of the display device, and a second area as an area disposed between the first lead electrode and the second lead electrode. Each of the metal layer of the first conductive ball and a surface of the second conductive ball are in contact with both the first pad electrode and the first lead electrode.

A three-dimensional (3D) memory device includes a memory array device, a peripheral device, an etch stop layer, and a backside gate line slit. The memory array device includes a frontside and a backside, a plurality of memory strings, and a plurality of word lines in a staircase structure coupled to the plurality of memory strings. The peripheral device is above the frontside of the memory array device. The etch stop layer is between the memory array device and the peripheral device. The backside gate line slit extends through the backside of the memory array device to the etch stop layer. The backside gate line slit includes a conductive gate line layer and an insulating gate line layer. The 3D memory device can increase manufacturing efficiency, increase yield, reduce thermal stress, reduce fluorine contamination, increase an overlay window, and decrease overlay errors.

A method includes bonding a first device die and a second device die to a substrate, and filling a gap between the first device die and the second device die with a gap-filling material. A top portion of the gap-filling material covers the first device die and the second device die. Vias are formed to penetrate through the top portion of the gap-filling material. The vias are electrically coupled to the first device die and the second device die. The method further includes forming redistribution lines over the gap-filling material using damascene processes, and forming electrical connectors over and electrically coupling to the redistribution lines.