A thermal conduction sheet holder include, in the following order, an elongated carrier film, a plurality of thermal conduction sheets, and an elongated cover film covering the plurality of thermal conduction sheets, the shortest distance between adjacent thermal conduction sheets is 2 mm or more, the plurality of thermal conduction sheets are disposed at intervals in a longitudinal direction of the carrier film and the cover film, and the plurality of thermal conduction sheets are peelable from the cover film and the carrier film.

The package-on-package (POP) structure includes a first package unit of three-dimensional fan-out memory chips and a SiP package unit of the two-dimensional fan-out peripheral circuit chip. The first package unit includes: memory chips laminated in a stepped configuration; a molded substrate; wire bonding structures; a first rewiring layer; a first encapsulating layer; and first metal bumps, formed on the first rewiring layer. The SiP package unit includes: a second rewiring layer; a peripheral circuit chip; a third rewiring layer, bonded to the circuit chip; first metal connection pillars; a second encapsulating layer for the circuit chip and the first metal connection pillars; and second metal bumps on the second rewiring layer. The first metal bumps are bonded to the third rewiring layer. Integrating the two package units into the POP is enabled by three rewiring layers and the molded substrate which supports the first package unit during wire bonding process.

Methods for die attachment of multichip and single components may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

Provided herein include various examples of an apparatus, a sensor system and examples of a method for manufacturing aspects of an apparatus, a sensor system. The method may include forming bumps on a surface of one or more electrical contacts, where the one or more electrical contacts are accessible on an upper surface of a die, where the die is oriented on a substrate, and where the electrical contacts comprise bonding pads. The method may also include coupling one or more additional electrical contacts to the one or more electrical contacts, where the coupling comprises wire-bonding each additional electrical contact of the additional electrical contacts to one of the one or more electrical contacts accessible on the upper surface of the die, via a portion of the bumps on the surface of the one or more electrical contacts, thereby forming wire-bonded connections.

A semiconductor device according to an embodiment includes a semiconductor chip, a substrate, and an adhesive layer. The substrate supports the semiconductor chip. The adhesive layer is disposed between the semiconductor chip and the substrate. The adhesive layer bonds the semiconductor chip and the substrate. The adhesive layer has a first portion and a plurality of second portions. The first portion is formed of a first material. The plurality of second portions are formed of a second material. The second material has a greater elastic modulus and a greater thermal conductivity than the first material. The second portions are located inside the first portion. Each of the second portions is in contact with and connects the semiconductor chip and the substrate.

The purpose of this invention is to provide a semiconductor device that prevents defects in semiconductor elements caused by differences in thermal expansion and maintains low electrical resistance by directly or indirectly laminating an FeNi alloy metal layer onto the front-surface or back-surface electrodes of the semiconductor element. In this invention, an FeNi alloy metal layer is directly or indirectly applied on the surface electrodes of the semiconductor element, and the semiconductor element is connected to a conductor through the FeNi alloy metal layer. Depending on the application, the Ni content of the FeNi alloy metal layer is set within the range of 36% to 45% by weight, and the thickness of the FeNi alloy metal layer is set within the range of 2 m to 20 m.

A package structure includes a package substrate. Numerous leads penetrate the package substrate. A top plate is disposed on the package substrate. An extension component extends from the top plate to the package substrate. Four side plates are disposed between the package substrate and the top plate. A die is disposed on the package substrate. The die includes a first surface and a second surface, and the first surface and the second surface are opposite. The extension component is bonded to the first surface of the die through a thermal conductive adhesive. Numerous conductive terminals are disposed on the die and exposed through the first surface. Numerous wires are disposed on the package substrate. Each wire is connected to one of the leads and one of the conductive terminals.

A power semiconductor module arrangement comprises a substrate comprising a dielectric insulation layer, and a first metallization layer attached to the dielectric insulation layer, at least one semiconductor body mounted on the first metallization layer, and a first layer comprising an encapsulant, the first layer being arranged on the substrate and covering the first metallization layer the at least one semiconductor body, wherein the first layer is configured to release liquid or oil at temperatures exceeding a defined threshold temperature.

A package structure is provided, which includes a redistribution structure, an interposer substrate disposed over the redistribution structure, a first semiconductor die disposed between the redistribution structure and the interposer substrate, a second semiconductor die partially overlapping the first semiconductor die in a direction perpendicular to a surface of the redistribution structure, and a first protective layer surrounding the first semiconductor die.

A die attach film structure includes a dicing film, an insulating adhesion layer including an upper surface and a lower surface opposite the upper surface, the lower surface of the insulating adhesion layer contacting an upper surface of the dicing film and including an insulating filler, and a conductive adhesion layer contacting an upper surface of the insulating adhesion layer and including a conductive filler.