A semiconductor device, including: a heat dissipation plate having a heat dissipation surface; a cooling module having a cooling surface, the cooling module being disposed so that the cooling surface faces the heat dissipation surface of the heat dissipation plate; and a bonding member provided between the heat dissipation surface and the cooling surface. The bonding member includes: a thermally conductive part that bonds the heat dissipation surface and the cooling surface, and an electrically conductive part that electrically connects the heat dissipation surface and the cooling surface.

A heat radiating structure includes a mesh which abuts on a surface of a die of a GPU and a copper plate which is equipped with a recessed part into which the mesh fits and which sandwiches and holds the mesh together with the surface of the die. The mesh includes a heat generating element abutment range part into which a liquid metal is impregnated and which abuts on the surface of the die and receives heat from the die and a heat generating element non-abutment region part which is contiguous to the heat generating element abutment range part and does not abut on the surface of the die. The heat generating element non-abutment range part is fixed to the copper plate with the use of a sponge tape. The heat generating element abutment range part is shaped to protrude from the heat generating element abutment range part.

Example embodiments are directed to a package-on-package (PoP) package structure and a method of manufacturing the same. The PoP package structure includes a substrate, a first package on the substrate, a second package on the first package, a first thermal conductive layer between the first package and the second package, a second thermal conductive layer on the second package, and a thermal interface material layer between the first package and the substrate. The first thermal conductive layer passes through a via penetrating the first package to contact the thermal interface material layer, and the second thermal conductive layer passes through a via penetrating the second package to contact the first thermal conductive layer.