Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include exposing an edge region to treatment gases such as etch gases and/or inhibition gases. Also provided herein are exclusion ring assemblies including multiple rings that may be implemented to provide control of the processing environment at the edge of the wafer.

The present invention is a susceptor for epitaxial growth on a wafer having a main surface of a (110) plane, the susceptor for epitaxial growth including: a pocket for mounting a wafer; and an outer periphery surrounding the pocket, wherein the outer periphery is provided with a flat portion and a raised portion that is a portion adjacent to the pocket and that has a portion projected from an upper face of the flat portion, and the pocket is designed such that, when the wafer is mounted on the pocket, a height of an upper face of the wafer is positioned above a height of the upper face of the flat portion. This provides a susceptor for epitaxial growth that can produce a highly flat (110) epitaxial wafer by using a wafer (a substrate) having a main surface of (110).

A substrate alignment device includes first and second support members that are arranged to be opposite to each other and be spaced apart from each other in a plan view, and respectively support an outer peripheral end of a substrate from a position below the substrate. Further, the substrate alignment device includes a first pressing member that is arranged to be opposite to the first support member in a plan view, and moves the substrate by pressing one portion of the outer peripheral end of the substrate in a first direction directed from the second support member toward the first support member with the substrate supported by the first and second support members. The first support member includes a movement limiter that limits movement of the substrate in the first direction past a predetermined prescribed position.

A pedestal assembly is provided. The pedestal assembly includes an electrostatic chuck configured to support a workpiece. The pedestal assembly includes a focus ring have a top surface and a bottom surface. The focus ring can be configured to surround a periphery of the workpiece when the workpiece is positioned on the electrostatic chuck. The pedestal assembly includes a plurality of insulators. The pedestal assembly further includes a conductive member positioned between at least a portion of the bottom surface of the focus ring and at least a portion of one of the plurality of insulators.

Disclosed are a support unit and a substrate processing apparatus including the same, which prevent a backflow, a wake, or an upward airflow from occurring around a spin chuck. The support unit and the substrate processing apparatus including the same include: a spin chuck; a guide ring provided to surround the spin chuck; a guide ring is installed under the guide ring, and includes cylindrical support with open top and bottom, and a supporting body installed under the guide ring and having a cylindrical shape with open top and bottom portions, in which the supporting body is provided to surround the side of the spin chuck, and a plurality of discharge ports is formed in the supporting body.

A substrate is held by an upper holding device, and a lower-surface center region of the substrate is cleaned. During this cleaning, a suction holder of a lower holding device located below the upper holding device is rotated. The substrate held by the upper holding device is transferred to a suction holder of the lower holding device. A lower-surface outer region of the substrate held by the suction holder is cleaned. After the lower-surface center region of the substrate is cleaned and until the substrate is transferred to the suction holder of the lower holding device, rotation of the lower holding device is stopped. Further, the suction holder is moved in a horizontal direction by a base device. A rotation stopping operation for the suction holder and a horizontal moving operation for the suction holder are performed such that the periods for these operation at least partially overlap with each other.

A susceptor defining an axial direction, a radial direction, and a circumferential direction is provided. The susceptor includes a support surface for a substrate. The susceptor further includes a rim extending around a periphery of the support surface. The rim defines a plurality of pockets spaced apart from one another along the circumferential direction. The rim further defines one or more vents at each respective pocket of the plurality of pockets.

A substrate is held by an upper holding device, and a lower-surface center region of the substrate is cleaned with use of a lower-surface brush. The substrate is lowered from an upper holding device and transferred to a suction holder of a lower holding device. The substrate held by the suction holder is cleaned with use of a processing liquid. A cup is provided to be liftable and lowerable between an upper cup position and a lower cup position. The cup is in the lower cup position when waiting. A period for the substrate lowering operation and a period for the cup lifting operation at least partially overlap with each other.

Etch uniformity is improved by providing a thermal pad between an insert ring and electrostatic chuck in an etching chamber. The thermal pad provides a continuous passive heat path to dissipate heat from the insert ring and wafer edge to the electrostatic chuck. The thermal pad helps to keep the temperature of the various components in contact with or near the wafer at a more consistent temperature. Because temperature may affect etch rate, such as with etching hard masks over dummy gate formations, a more consistent etch rate is attained. The thermal pad also provides for etch rate uniformity across the whole wafer and not just at the edge. The thermal pad may be used in an etch process to perform gate replacement by removing hard mask layer(s) over a dummy gate electrode.