A substrate processing apparatus cleans a substrate. The substrate processing apparatus includes a processing container, a stage, a top board, a lifting/lowering mechanism, and a guide mechanism. The stage is located inside the processing container and configured to support the substrate. The top board faces the stage. The lifting/lowering mechanism is configured to lift and lower the substrate. The guide mechanism is located on the top board and configured to bring the substrate into contact therewith.

In some examples, a device comprises a wafer chuck, a member having a surface facing the wafer chuck, a blade supported by the surface, a first vacuum nozzle extending through the member and having a first vacuum orifice facing a same direction as the surface, and a second vacuum nozzle extending through the member and having a second vacuum orifice facing the same direction as the surface. The first and second vacuum orifices are on opposing sides of the blade.

Methods and systems for processing a bevel edge of a wafer in a bevel plasma chamber. The method includes receiving a pulsed mode setting for a RF generator of the bevel plasma chamber. The method includes identifying a duty cycle for the pulsed mode, the duty cycle defining an ON time and an OFF time during each cycle of power delivered by the generator. The method includes calculating or accessing a compensation factor to an input RF power setting of the generator. The compensation factor is configured to add an incremental amount of power to the input power setting to account for a loss in power attributed to the duty cycle to be run in the pulsed mode. The method is configured to run the generator in the pulse mode with the duty cycle and the pulsing frequency. The generator is configured to generate the input power in pulsing mode that includes incremental amount of power to achieve an effective power in the bevel plasma chamber to achieve a target bevel processing throughput, while reducing charge build-up that causes arcing damage.

A semiconductor processing device, comprising: a first chamber; a second chamber movable with respect to the first chamber portion between an open position and a closed position, a micro-chamber being formed between the first chamber portion and the second chamber portion when the second chamber portion is in the closed position with respect to the first chamber portion. The first chamber portion has a first channel formed on an inner wall surface of the first chamber portion facing the micro-chamber. The second chamber portion has a second channel formed on an inner wall surface of the second chamber portion facing the micro-chamber. When the second chamber portion is in the closed position with respect to the first chamber portion and a semiconductor wafer is accommodated in the micro-chamber, the first channel and the second channel communicate with each other and form an edge micro-processing space together, such that the outer edge of the semiconductor wafer accommodated in the micro-chamber extends into the edge micro-processing space. The edge micro-processing space is able to realize processing of the outer edge of the semiconductor wafer.

Disclosed is an apparatus for treating a substrate, which includes: a first unit configured to perform a coating process of forming a film on a substrate; a transfer unit including a transfer robot transferring a substrate for which the coating process is terminated; and a controller controlling the first unit and the transfer unit, in which the controller controls the substrate for which the coating process is terminated in the first unit to rotate at a first rotational velocity until the substrate is transferred by the transfer unit.

Provided is a substrate processing apparatus capable of effectively removing contaminants in an edge region of a substrate. The substrate processing apparatus comprises: a support configured to rotate a substrate; a first bath installed around the support and configured to store a cleaning liquid and form a first opening on an upper surface thereof; and a first ultrasonic oscillator installed in the first bath and configured to provide an ultrasonic wave towards a surface of the cleaning liquid exposed by the first opening and form a first water film protruding from the surface of the cleaning liquid, wherein the substrate is not immersed in the first bath, and the edge region of the substrate is cleaned by the protruding first water film while rotating the substrate by the support.