Step ramp grading yield enhancement for hybrid bonding is provided. A device may provide a plurality of first contacts on a first substrate. A device may provide a plurality of second contacts on a second substrate, the plurality of second contacts configured to align with the plurality of first contacts. A device may anneal the first substrate and the second substrate to electrically couple the plurality of first contacts to the plurality of second contacts, wherein at least one of an annealing time or an annealing temperature is based on a recess depth of the plurality of first contacts from a surface of the first substrate.

Disclosed herein are methods of forming a microelectronic component. In some embodiments, the method includes providing a substrate, forming a metal feature over the substrate, forming an organic dielectric layer over the element such that the organic dielectric layer covers sidewalls of the metal feature, forming an inorganic dielectric material over the organic dielectric layer, and planarizing the inorganic dielectric material, the organic dielectric layer, and the metal feature. The planarized surface can serve as a hybrid bonding surface. The metal feature is exposed at the hybrid bonding surface.

Thermocompression bonding head fixture designs and techniques for use thereof are provided. In one aspect, an exemplary bonding head fixture includes: a workpiece contact surface; at least one recess in the workpiece contact surface; and heat passages leading into and out of the at least one recess. In another aspect, an exemplary bonding head includes: a bonding head fixture having a workpiece contact surface, at least one recess in the workpiece contact surface, and heat passages leading into and out of the at least one recess; and a heat source connected to at least one of the heat passages. Methods for use of the present bonding head fixtures are also provided.

Provided is a multi-dies stacking structure, which includes: a plurality of core dies stacked, wherein each core die comprises a first sub-core die and a second sub-core die vertically stacked; adjacent core dies are interconnected through micro-metal bumps, and the first sub-core die is interconnected with the second sub-core die through hybrid bonding members.

A microelectronic assembly and a method of forming same. The assembly includes: first and second microelectronic structures; and an interface layer between the two microelectronic structures including dielectric portions in registration with dielectric layers of each of the microelectronic structures, and electrically conductive portions in registration with electrically conductive structures of each of the microelectronic structures, wherein the dielectric portions include an oxide of a metal, and the electrically conductive portions include the metal.

Disclosed herein are methods for direct bonding. In some embodiments, the direct bonding method includes providing a first element having a first bonding surface, providing a second element having a second bonding surface, slightly etching the first bonding surface, treating the first bonding surface with a terminating liquid treatment to terminate the first bonding surface with a terminating species, and directly bonding the first bonding surface to the second bonding surface without the use of an intervening adhesive and without exposing the first bonding surface to plasma.

Provided is a bonding structure including a first dielectric layer, a first non-twinned metal layer, a first twinned metal layer, and a first transition layer. The first dielectric layer has a first inner sidewall defining a first via hole and a first trench on the first via hole. The first non-twinned metal layer is filled in the first via hole. The first twinned metal layer is disposed over the first non-twinned metal layer and within the first trench. The first transition layer is sandwiched between the first non-twinned metal layer and the first twinned metal layer.