An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.

A textured glass-based article with multiple haze levels is provided. The textured glass-based articles are produced by utilizing a combination of etching and mechanical polishing to produce the multiple haze levels.

The present disclosure describes a method and apparatus to remove consumable (e.g., sacrificial) polishing pad layers from a multilayer polishing pad. For example, the method includes measuring a thickness profile of a top polishing pad layer of a multilayer polishing pad and comparing the thickness profile to a threshold. The method, in response to the thickness profile being above the threshold, rinses the top polishing pad layer of the multilayer polishing pad and removes, after the top polishing pad layer has been rinsed, the top polishing pad layer to expose an underlying polishing pad layer of the multilayer polishing pad.

The present disclosure describes an apparatus and a method for a chemical mechanical polishing (CMP) process that recycles used slurry as another slurry supply. The apparatus includes a pad on a rotation platen, a first feeder and a second feeder where each of the first and the second feeder is configured to dispense a slurry on the pad, and a flotation module configured to process a first fluid sprayed from the pad. The flotation module further includes an oulet fluidly connected to the second feeder and configured to output a second fluid, and a first tank configured to store a plurality of chemicals where the plurality of chemicals include a frother and a collector configured to chemically bond with chemicals in the first fluid.

The present disclosure provides a composition for manufacturing a polyurethane polishing pad. The composition includes 15 to 25 wt % of MBCA, 25 to 45 wt % of isocyanates, 15 to 45 wt % of polyols, 5 to 35 wt % of EOPO, and 1 to 5 wt % of additives. The polyurethane polishing pad made from the composition of the present disclosure has a hardness within a range of 40 to 70 shore D, an elongation within a range of 200 to 400%, a density within a range of 0.7 to 0.9 g/cc, a modulus within a range of 25000 to 40000 kg/cm.sup.2, and a tensile stress within a range of 120 to 320 kg/cm.sup.2.

There is provided an apparatus for polishing, comprising a polishing table configured to support and rotate a polishing pad; a holder configured to hold an object and press the object against the polishing pad; a polishing solution supply device provided with a contact member and configured to supply a polishing solution to an opening in a bottom face of the contact member in a state that the contact member comes into contact with or is adjacent to the polishing pad, thereby spreading the polishing solution on the polishing pad, the polishing solution supply device causing at least part of used polishing solution returned by rotation of the polishing pad to be dammed up by the contact member and setting the contact member either in a direction of keeping the dammed up polishing solution on the polishing pad or in a direction of discharging the dammed up polishing solution, according to an angle of the polishing solution supply device with respect to a radial direction of the polishing pad; an arm linked with the polishing solution supply device; a rotating mechanism configured to rotate the polishing solution supply device with respect to the arm; and a controller configured to control the rotating mechanism to change the angle of the polishing solution supply device with respect to the radial direction of the polishing pad and thereby control a discharge amount of the polishing solution by the contact member of the polishing solution supply device.

A plane polishing machine polishing one surface of a workpiece flat, the plane polishing machine comprises a stick-on disk decentering jig of a circular plate shape mounted on a rotating polishing surface plate, a jig rotation drive device having a plurality of guide rollers coming into contact with the stick-on disk decentering jig, a rotational direction restriction device permitting rotation of the stick-on disk in a direction identical to a rotational direction of the stick-on disk decentering jig and inhibiting rotation of the stick-on disk in a direction opposite to the rotational direction of the stick-on disk decentering jig, and a jig rotation suppression device periodically suppressing rotation of the stick-on disk decentering jig rotated by the drive guide roller, for a predetermined period.

Certain aspects of the present disclosure provide techniques for a method of removing material on a substrate. An exemplary method includes rotating a substrate about a first axis in a first direction and urging a surface of the substrate against a polishing surface of a polishing pad while rotating the substrate, wherein rotating the substrate about the first axis includes rotating the substrate a first angle at a first rotation rate, and then rotating the substrate a second angle at a second rotation rate, and the first rotation rate is different from the second rotation rate.

An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.

A polishing apparatus for a substrate, includes: a platen having a polishing pad attached to an upper surface thereof, and configured to rotate in a rotational direction, a temperature control unit configured to spray a temperature control fluid onto the polishing pad, a slurry supply unit configured to supply a slurry to the polishing pad, a polishing head on the polishing pad, and configured to rotate a semiconductor substrate in contact with the polishing pad, and a first fence between the temperature control unit and the slurry supply unit extending from a center outwardly, along the rotational direction, to control a flow of the temperature control fluid, wherein the temperature control unit, the slurry supply unit, and the polishing head are sequentially positioned along the rotational direction.