A non-transitory computer-readable storage medium storing a program of stretching operation of an elastic membrane which can enhance elasticity of an elastic membrane in a short time without using a dummy wafer is disclosed. The non-transitory computer-readable storage medium storing a program of stretching operation of an elastic membrane in a substrate holding apparatus, the program causes a computer to perform stretching operation of supplying a pressurized fluid to a pressure chamber formed by the elastic membrane and allowing the pressure chamber to be open to the atmosphere a predetermined number of times by a pressure regulating device in a state where the substrate holding apparatus is positioned above a polishing table during standby operation of a polishing apparatus.

An elastic membrane to be used for a polishing head includes a contact portion configured to come into contact with a wafer, an annular side wall provided to stand on an outer peripheral end of the contact portion, a first partition wall linearly extending inward in a radial direction in sectional view from the side wall, and a second partition wall linearly extending inward and upward in the radial direction in sectional view from an outer peripheral end portion of the contact portion, wherein the first partition wall, the second partition wall, and the side wall constitute an edge pressure chamber for pressing an edge of the wafer.

A polishing head of a wafer polishing apparatus is provided with: a membrane head that can independently control a center control pressure pressing a center portion of a wafer, and an outer periphery control pressure pressing an outer peripheral portion of the wafer; an outer ring integrated with the membrane head so as to configure the outer peripheral portion of the membrane head; and a contact type retainer ring provided outside the membrane head. The membrane head has a central pressure chamber of a single compartment structure that controls the center control pressure, and an outer peripheral pressure chamber that is provided above the central pressure chamber, and that controls the outer periphery control pressure. A position of a lower end of the outer ring reaches at least a position of an inner bottom surface of the central pressure chamber.

A substrate processing apparatus includes a substrate holder, a first cleaning body, a first moving mechanism, a second cleaning body, a second moving mechanism, and a controller. The first cleaning body cleans one of the upper surface and the lower surface of the substrate held by the substrate holder by ejecting fluid thereto or by coming into contact therewith. The second cleaning body cleans the other one of the upper surface and the lower surface of the substrate held by the substrate holder by coming into contact therewith. The controller controls the first moving mechanism and the second moving mechanism to perform a both-surface cleaning processing in which the first cleaning body which ejects the fluid to one surface or is in contact with the upper surface and the second cleaning body which is in contact with the lower surface are horizontally moved in synchronization with each other.

An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.

A polishing apparatus capable of preventing wear of rollers which are to transmit a load to a retainer ring and capable of preventing wear particles from escaping outside is disclosed. The polishing apparatus includes: a retainer ring disposed so as to surround the substrate and configured to press the polishing surface while rotating together with a head body; a rotary ring secured to the retainer ring and configured to rotate together with the retainer ring; a stationary ring disposed on the rotary ring; and a local-load exerting device configured to apply a local load to a part of the retainer ring through the rotary ring and the stationary ring. The rotary ring has rollers which are in contact with the stationary ring.

Provided is a polishing apparatus and polishing method which can preferably adjust a temperature of a surface of a polishing pad. A polishing apparatus includes: a polishing table configured to be rotatable, and to support the polishing pad; a substrate configured to hold an object to be polished, and to press the object to be polished against the polishing pad; a polishing liquid supplying portion configured to supply a polishing liquid to a polishing surface; a polishing liquid removing portion configured to remove the polishing liquid from the polishing surface; and a temperature adjuster configured to adjust a temperature of the polishing surface. In a rotating direction of the polishing table, the polishing liquid supplying portion, a polishing region where the object to be polished is pressed against the polishing surface by the substrate, the polishing liquid removing portion, and the temperature adjuster are disposed in this order.

An elastic membrane to be used for a polishing head includes a contact portion configured to come into contact with a wafer, an annular side wall provided to stand on an outer peripheral end of the contact portion, a first partition wall linearly extending inward in a radial direction in sectional view from the side wall, and a second partition wall linearly extending inward and upward in the radial direction in sectional view from an outer peripheral end portion of the contact portion, wherein the first partition wall, the second partition wall, and the side wall constitute an edge pressure chamber for pressing an edge of the wafer.

According to an embodiment, a polishing device which polishes a surface of a polishing target, includes a sensor, an end point detector, and an end point condition setter. The sensor senses a characteristic value correlated with a state of the surface during polishing. The end point detector detects that the characteristic value or a polishing time satisfies an end point condition corresponding to an end point of the polishing. The end point condition setter sets the end point condition in accordance with at least one of device information about the polishing device and polishing target information about the polishing target, and outputs the set end point condition to the end point detector.

Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.