A semiconductor package includes a first semiconductor chip including a first semiconductor layer, a first through-electrode that penetrates through the first semiconductor layer, a first bonding pad connected to the first through-electrode, and a first insulating bonding layer, and a second semiconductor chip on the first semiconductor chip and including a second semiconductor layer, a second bonding pad bonded to the first bonding pad, and a second insulating bonding layer bonded to the first insulating bonding layer, wherein the first insulating bonding layer includes a first insulating material, the second insulating bonding layer includes a first insulating layer that forms a bonding interface with the first insulating bonding layer and a second insulating layer on the first insulating layer, the first insulating layer includes a second insulating material, different from the first insulating material, and the second insulating layer includes a third insulating material, different from the second insulating material.

A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.

A semiconductor package includes a first semiconductor chip including a first substrate, a plurality of first pads on the first substrate, and a plurality of through-electrodes extending through the first substrate and connected to the plurality of first pads, and a second semiconductor chip on the first semiconductor chip, the second semiconductor chip including a second substrate, and a plurality of second pads below the second substrate and in contact with the plurality of first pads. The plurality of first pads includes a first group of first pads each including a first base layer including a first recess, and a first conductive pattern layer and a first insulating pattern layer alternately disposed in the first recess, and a second group of first pads each including a second base layer including a second recess, and a second conductive pattern layer disposed in the second recess.

A method for manufacturing a semiconductor package includes forming a first semiconductor chip having a first bonding surface, the first semiconductor chip including a first outermost insulating layer providing the first bonding surface, a first internal insulating layer on the first outermost insulating layer, a first external marks within the first outermost insulating layer, and a first internal mark within the first internal insulating layer. The first external marks include a first pattern having a first center portion and a second pattern having a first ring portion surrounding the first center portion when viewed in a plan view, the first internal mark is disposed between the first center portion and the first ring portion when viewed in the plan view, and the first external marks and the first internal mark together form a first alignment structure.