Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a bonded structure includes a first bonding layer including a first bonding contact and a first bonding alignment mark, a second bonding layer including a second bonding contact and a second bonding alignment mark, and a bonding interface between the first bonding layer and the second bonding layer. The first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface. The first bonding alignment mark includes a plurality of first repetitive patterns. The second bonding alignment mark includes a plurality of second repetitive patterns different from the plurality of first repetitive patterns.

Barrier or cladding structures that prevent top vias from chemically reacting to tape residue or other impurities address reliability issues in local silicon interposer interconnection in semiconductor packaging by mitigating metal atom migration and wire growth, thereby enhancing long-term reliability. The via cladding structure incorporates a multi-layered barrier comprising, alone or in any combination, SiOCH, SiO.sub.x, SiON, SiN.sub.x, CuO.sub.x, Ta, Ti, TaN, TiN, Mo, MoN, TaC, TiC, TaCN, or TiCN, enhancing electrical performance and long-term reliability. The method of forming the cladding or barrier structure involves a combination of cladding layer deposition, patterning, wet etch, isotropic dry etch or anisotropic dry etch process, flowable dielectric deposition or spin-coat dielectric, and chemical mechanical planarization (CMP) to ensure robust and reliable connections. The integration of these layers mitigates issues related to metal atom migration and wire growth, providing a solution for the growing demand for high-density, high-performance semiconductor packages.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die; a second die and a third die having a first surface and an opposing second surface, where the first surface of the second die is electrically coupled to the first die by interconnects and the first surface of the third die is electrically coupled to the first die by a bonding material, and the bonding material includes titanium, tantalum, gold, ruthenium, silver, aluminum and nitrogen, silicon and oxygen, silicon and nitrogen, or silicon, carbon, and nitrogen; a first material, around the second die and the third die, having a non-planar surface; and a second material, on the non-planar surface of the first material and on the second and third dies, having a thermal conductivity greater than 10 watt per meter-kelvin (W/m-K) and a thickness between 1 micron and 2 microns.

A method to form a first diamond composite wafer, a second diamond composite wafer or a third diamond composite wafer with a predetermined diameter includes the following steps: preparing a plurality of diamond blocks, wherein each diamond block has a dimension smaller than the predetermined diameter; attaching the plurality of diamond blocks to a first semiconductor substrate with the predetermined diameter to form a first temporary composite wafer, wherein a thermal conductivity of the first semiconductor substrate is smaller than that of the diamond block; and filling gaps among the plurality of diamond blocks of the first temporary composite wafer to form the first diamond composite wafer; or attaching the first diamond composite wafer to a second semiconductor substrate with the predetermined diameter to form the second diamond composite wafer, or removing the first semiconductor substrate from the first diamond composite wafer to form the third diamond composite wafer.

Disclosed herein are methods of forming a microelectronic component. In some embodiments, the method includes providing a substrate, forming a metal feature over the substrate, forming an organic dielectric layer over the element such that the organic dielectric layer covers sidewalls of the metal feature, forming an inorganic dielectric material over the organic dielectric layer, and planarizing the inorganic dielectric material, the organic dielectric layer, and the metal feature. The planarized surface can serve as a hybrid bonding surface. The metal feature is exposed at the hybrid bonding surface.

A silicon-coated oxidation-resistant copper includes a SiCuO.sub.x layer includes a silicon (Si)-oxygen (O)-copper (Cu) mixed layer formed by depositing silicon (Si). The silicon-coated oxidation-resistant copper includes: a copper layer; the SiCuO.sub.x layer including the silicon (Si)-oxygen (O)-copper (Cu) mixed layer formed on the copper layer; a first silicon (Si)-oxygen (O) mixed layer formed on the SiCuO.sub.x layer; a silicon (Si) layer formed on the first silicon (Si)-oxygen (O) mixed layer; and a second silicon (Si)-oxygen (O) mixed layer formed on the silicon layer (Si) layer.

Provided is a multi-dies stacking structure, which includes: a plurality of core dies stacked, wherein each core die comprises a first sub-core die and a second sub-core die vertically stacked; adjacent core dies are interconnected through micro-metal bumps, and the first sub-core die is interconnected with the second sub-core die through hybrid bonding members.

A microelectronic assembly and a method of forming same. The assembly includes: first and second microelectronic structures; and an interface layer between the two microelectronic structures including dielectric portions in registration with dielectric layers of each of the microelectronic structures, and electrically conductive portions in registration with electrically conductive structures of each of the microelectronic structures, wherein the dielectric portions include an oxide of a metal, and the electrically conductive portions include the metal.

A semiconductor package includes a first semiconductor chip including a first substrate, a plurality of first pads disposed on a front surface of the first substrate, a first insulating layer surrounding the plurality of first pads, and a plurality of wiring patterns disposed between the first substrate and the plurality of first pads and electrically connected to the plurality of first pads; and a second semiconductor chip disposed below the first semiconductor chip and including a second substrate, a plurality of second pads disposed on the second substrate and contacting the plurality of first pads, a second insulating layer surrounding the plurality of second pads and contacting the first insulating layer, and a plurality of through-electrodes penetrating through the second substrate to be connected to the plurality of second pads. The plurality of wiring patterns include top wiring patterns adjacent to the plurality of first pads in a direction perpendicular to the front surface. On a plane parallel to the front surface, within a first region having a first shape and first region area from a top down view, first top wiring patterns have a first occupied area between adjacent first pads of a first group of first pads from among the plurality of first pads, and within a second region having the first shape and first region area from a top down view, second top wiring patterns have a second occupied area, larger than the first occupied area, between adjacent first pads of a second group of first pads from among the plurality of first pads. From a top down view, each pad of the first group of first pads has a first area, and each pad of the second group of first pads has a second area, wherein the first area is smaller than a second area.

The present application discloses a semiconductor device and a method for fabricating the same. The semiconductor device includes a first substrate comprising a front side and a back side parallel to the front side; a bonding dielectric positioned on the front side of the first substrate; a redistribution layer positioned between the bonding dielectric and the front side of the first substrate; a first dielectric layer positioned between the front side of the first substrate and the redistribution layer; a capping layer positioned between the redistribution layer and the bonding layer; a first conductive pad positioned between the capping layer and the bonding layer; a second dielectric layer positioned between the capping layer and the bonding layer, wherein a surface of the second dielectric layer is coplanar with a surface of the first conductive pad; and a conductive feature positioned in the bonding dielectric and the first conductive pad.