A method for manufacturing a semiconductor substrate includes: applying an underlayer film-forming composition directly or indirectly to a substrate to form an underlayer film; forming a metal-containing resist film from a metal-containing resist forming material on the underlayer film; exposing the metal-containing resist film to extreme ultraviolet rays; and developing the exposed metal-containing resist film. The underlayer film-forming composition includes: a metal compound including at least a metal atom and an organic acid; and a solvent.

A method of forming a pattern of a semiconductor device includes: preparing a semiconductor substrate including a cell region and an outer region; applying a photoresist on the semiconductor substrate; irradiating extreme ultraviolet (EUV) light reflected from an EUV mask, onto the photoresist; forming a photoresist pattern in the cell region and the outer region; and etching the semiconductor substrate, using the photoresist pattern as an etch mask. The EUV mask includes: a plurality of main patterns in a first zone, of the EUV mask, corresponding to the cell region; and a first lane and a second lane in a second zone, of the EUV mask, corresponding to the outer region, wherein the first lane and the second lane surround the plurality of main patterns, wherein the first lane has a line-and-space pattern, and the second lane has a protruding pattern.

A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.

A processing method in one embodiment includes: a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate; a step that takes an image of the end face of a substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the substrate; a step that calculates warp amount of the substrate based on the obtained shape data; a step that forms a resist film on a surface of the substrate; a step that determines the supply position from which an organic solvent is to be supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the substrate.

Disclosed herein is a coating composition for use with an overcoated photoresist composition, comprising: a thermally crosslinkable resin; a compound of the following general formula (1):

##STR00001##

wherein: W.sub.1, W.sub.2, W.sub.3, and W.sub.4 are independently a single bond or substituted or unsubstituted C.sub.1-5 alkylene; L.sub.1 and L.sub.2 are each an ester group; L.sub.3 and L.sub.4 are independently a single bond or a group chosen from carbonyl, or an ester group; R.sub.1 and R.sub.2 are independently hydrogen, halogen, substituted or unsubstituted C.sub.1-10 alkyl, or substituted or unsubstituted C.sub.3-10 cycloalkyl; R.sub.3 and R.sub.4 are independently hydrogen, halogen, hydroxyl, substituted or unsubstituted C.sub.1-10 alkyl, or substituted or unsubstituted C.sub.3-10 cycloalkyl; and a solvent.

The present invention provides a composition from which a pattern having high resolution can be formed, and a resist film, a pattern forming method, and a method for producing an electronic device that are related to the composition. A composition according to the present invention includes a compound A having a plurality of groups represented by any one of formula (A1) to formula (A3), and a compound B having a plurality of specific functional groups selected from the group consisting of a nitrogen-containing aromatic heterocyclic group, NH.sub.2, an NH.sub.2 group protected by a removable protecting group, NHR.sup.N1 an NHR.sup.N1 group protected by a removable protecting group, NR.sup.N2.sub.2, CN, OH, OR.sup.O, SH, SR.sup.S, PR.sup.P1.sub.2, and P(OR.sup.P2).sub.2. The composition satisfies at least one of requirement 1 or requirement 2.

A composition for forming a protective film using a polymer having an imide group: cured under a film-forming condition in air and an inert gas; forming a protective film having excellent heat resistance, embedding and planarization ability for a pattern formed on a substrate, and good adhesiveness to the substrate; and forming a protective film having excellent resistance against an alkaline aqueous hydrogen peroxide. A composition for forming a protective film against alkaline aqueous hydrogen peroxide, including: (A) a polymer having a repeating unit represented by general formula (1A) having at least one or more fluorine atoms and at least one or more hydroxy groups, a terminal group is any one of the following general formulae (1B) and (1C); and organic solvent, wherein R.sub.1 represents any one group represented by the following formula (1D), and two or more kinds of R.sub.1 are optionally used in combination,

##STR00001## wherein R.sub.1 represents any one group represented by the following formula (1D), and two or more kinds of R.sub.1 are optionally used in combination.

##STR00002##

An object of the present invention is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by EUV exposure. Another object thereof is to provide a method for producing a liquid chemical. The liquid chemical of the present invention includes an organic solvent; Fe nanoparticles containing a Fe atom and having a particle size of 0.5 to 17 nm; and Pb nanoparticles containing a Pb atom and having a particle size of 0.5 to 17 nm, in which a ratio of the number of the Fe nanoparticles contained to the number of the Pb nanoparticles contained is 1.0 to 1.010.sup.4, based on the number of the particles per unit volume of the liquid chemical.

The present invention provides a composition for treating a semiconductor device, which is capable of forming a coating film having excellent ALD inhibition properties. The composition for treating a semiconductor device of the present invention contains a compound which has a specific functional group bonded or adsorbed to a substrate and has a carbon-carbon triple bond, and a solvent, in which the specific functional group is a basic functional group or an acidic functional group.

A method for wafer planarization according to an embodiment of the present invention comprises: coating a wafer with a coating material; preparing a template that is fixed to an upper chuck and coated with a release agent; introducing the wafer and the upper chuck into a chamber and pressing the coating material on the wafer with the template in a vacuum atmosphere; and releasing the vacuum in the chamber and unloading the upper chuck from the wafer.