A contact structure and a method of forming the contact structure. The contact structure includes: a metallic contact; a flexible dielectric material; and an interlevel dielectric material surrounding, and in direct contact with, both the metallic contact and the flexible dielectric material. The flexible dielectric material has a lower modulus of elasticity than does the interlevel dielectric material. The flexible dielectric material and the interlevel dielectric material are different dielectric materials. The flexible dielectric material may be positioned to be compressed in response to a shearing force generated at an interface between the flexible dielectric material and the metallic contact during expansion of the metallic contact. The metallic contact may include a bottom portion and a top portion, wherein the top portion includes an upper part and a lower part, and wherein the flexible dielectric material is in direct contact with the lower part of the top portion.

A semiconductor device and method of fabrication are described. The device includes a semiconductor RFID IC base layer; a passivation layer located over the base layer and including a metal insert within the passivation layer; a repassivation layer located over the passivation layer and the metal insert; an assembly pad layer located over the repassivation layer. The device includes a first region R1 of the device, where a height of the repassivation layer is given by d.sub.1, and a region R1 is provided with an assembly pad in the assembly pad layer over the repassivation layer that has an area A.sub.1. The device includes an nth region RN of the device, where the height of the repassivation layer is given by d.sub.n, where d.sub.1>d.sub.n, and the region RN is provided with an assembly pad in the bump layer over the repassivation layer, which has an area A.sub.n, where A.sub.n>A.sub.1.

A process for forming silver-containing wettable material structures, wherein, on a metal layer containing aluminum, a zinc layer is deposited, the zinc layer reacting with the metal layer and creating a surface micro-roughness; the zinc layer is removed; and a wettable layer containing silver is deposited by vapor deposition. The wettable layer is formed by an adhesion layer, containing titanium or chromium; a barrier layer, containing nickel, on the adhesion layer; and a bonding layer, containing silver, on the barrier layer.

Embodiments disclosed herein include electronic devices and methods of forming electronic devices. In an embodiment, an electronic device comprises a die. In an embodiment, the die comprises a semiconductor substrate, a bump field over the semiconductor substrate, and a V-groove into the semiconductor substrate, wherein the V-groove extends to an edge of the semiconductor substrate. In an embodiment, the V-groove is free from conductive material. In an embodiment, the electronic device further comprises an optical fiber inserted into the V-groove.

Multiple first recesses are formed on the side of an inorganic insulating layer facing towards multiple LEDs. Orthographic projections of the first recesses on a driving substrate do not overlap orthographic projections of the LEDs on the driving substrate. Thus, when a first planarization layer covering the multiple LEDs is formed on the side of the multiple LEDs facing away from the driving substrate, the first recesses can be filled with the first planarization layer, so that a contact area between the first planarization layer and the inorganic insulating layer can be increased, a binding force between the first planarization layer and the inorganic insulating layer can be increased, and the risk of peeling off the first planarization layer can be reduced, thereby improving the stability of a QD-LED device.

Disclosed is an element including a conductive feature at a contact surface of the element and a nonconductive region at the contact surface in which the conductive feature is at least partially embedded. The contact feature includes a conductive material and an amount of impurities at a grain boundary of the conductive material. The impurities have a non-alloying material that does not form an alloy with the conductive material at a bonding temperature.

A first integrated circuit (IC) die and a second IC die are bonded together in a stacked arrangement in a device package. The second IC die includes at least one bonding structure that is bonded to the first IC die. A barrier layer on sidewalls of a top portion of the bonding structure is removed and replaced with a dielectric liner that is formed on the sidewalls after the bonding structure is formed. The dielectric liner has a material removal rate (e.g., for processes such as CMP, grinding, and/or chemical-based surface cleaning) that is closer to the material removal rate of the bonding structure than the material removal rate of the barrier liner. This reduces the likelihood of the formation of voids in the bond between the first IC die and the second IC die that might otherwise occur due to excessive material removal from the bonding structure.

A semiconductor device includes a first semiconductor substrate including a first semiconductor device, a second semiconductor substrate including a second semiconductor device, and a bonding region that is between the first semiconductor device and the second semiconductor device and includes a first region, a second region, and a third region that is between the first region and the second region and extends around the first region, where the bonding region includes: a first bonding pad on the first region, a second bonding pad on the second region, and a third bonding pad on the third region, and where the third bonding pad extends around the first bonding pad.