Exothermic reactive bonding for semiconductor die assemblies, and associated systems and methods are disclosed. In an embodiment, a semiconductor die includes a dielectric layer having a conductive pad, where at least a portion of a surface of the dielectric layer includes a first epoxy compound. When another semiconductor die including a second epoxy compound (and another conductive pad) is brought in contact with the semiconductor die such that the first and second epoxy compounds can exothermically react, the thermal energy emanating from the exothermic reaction can facilitate bonding between the conductive pads to form interconnects between the two semiconductor dies. In some cases, the thermal energy is sufficient to form the interconnects. In other cases, the thermal energy assists the post bond annealing process to form the interconnects such that the annealing can be carried out at a lower temperature.