Disclosed is a new configuration for improving temperature dependency of optical modulation output characteristics, and an implementation form adapted to each configuration in an optical transmitter in which an optical modulator and a driver IC thereof are integrally packaged. The optical transmitter includes: an optical modulator; a driver integrated circuit (driver IC) for supplying a modulation electrical signal for the optical modulator; a first Peltier device for controlling a temperature of the optical modulator; and a second Peltier device for controlling a temperature of the driver IC, in which the optical modulator and the driver IC are connected by a wire, and the temperature of the second Peltier device is set to be lower than the temperature of the first Peltier device.

A power semiconductor package includes a first substrate assembly with a power semiconductor die defining a high-side power switch, a second substrate assembly arranged parallel to the first substrate assembly which has a power semiconductor die defining a low-side power switch, and a power terminal assembly. The power terminal assembly includes a power terminal substrate arranged between the first and the second substrate assembly, a high-side drain power terminal electrically connected to an electrical drain circuit of the high-side power switch, a low-side source power terminal electrically connected to an electrical source circuit of the low-side power switch, and a mid-point power terminal electrically connected to an electrical source circuit of the high-side power switch and to an electrical drain circuit of the low-side power switch. The high-side drain power terminal, the low-side source power terminal, and the mid-point power terminal are each arranged on the power terminal substrate.

A semiconductor device includes: a switch circuit chip and a control circuit chip, which are mounted on a first die pad; a first conductive bonding material configured to bond the first die pad and the switch circuit chip; and a second conductive bonding material configured to bond the first die pad and the control circuit chip. The switch circuit chip includes: a first semiconductor substrate bonded to the first die pad by the first conductive bonding material; and a first transistor and a second transistor, which have sources connected to each other. Both the first transistor and the second transistor are high electron mobility transistors including nitride semiconductors. The source of the first transistor and the source of the second transistor are electrically connected to the first die pad via the control circuit chip.

A semiconductor device includes: a semiconductor element; an island lead on which the semiconductor element is mounted; a terminal lead electrically connected to the semiconductor element; a wire connected to the semiconductor element and the terminal lead; and a sealing resin covering the semiconductor element, the island lead, the terminal lead, and the wire. The terminal lead includes a base member having an obverse surface facing in a thickness direction of the terminal lead, and a metal layer located between the obverse surface and the wire. The base member has a greater bonding strength with respect to the sealing resin than the metal layer. The obverse surface includes an opposing side facing the island lead. The obverse surface includes a first portion that includes at least a portion of the opposing side and that is exposed from the metal layer.

A lead frame, an SSD module, and an SSD device. The lead frame includes: a first base island, configured to mount a storage control chip; a second base island, configured to mount a Flash; and a pin array, distributed around a periphery of the first base island.

A power module is provided. The power module includes a first lead frame, a first die, a substrate, a second lead frame, and a second die. The first lead frame has a first part and a second part. The first die is arranged on top of the first part of the first lead frame. A first power device is formed on the first die. The substrate is arranged on top of the second part of the first lead frame. The second lead frame is arranged on top of the substrate. The second die is arranged on top of the second lead frame. A first control circuit is formed on the second die, and the first control circuit is configured to control the first power device.

An electronic device includes a carrier, a first die, and a second die. The first die is disposed on the carrier and includes a first bonding pad and a second bonding pad. The second die is disposed on the carrier and includes a third bonding pad and a fourth bonding pad. The first bonding pad is directly connected to the third bonding pad through a first bonding wire, and the second bonding pad is directly connected to the fourth bonding pad through a second bonding wire. The first bonding pad has a recessed space, and the second bonding pad is disposed in the recessed space.

A semiconductor device includes a conductive support member with first and second die pads, a first semiconductor element on the first die pad, a second semiconductor element on the second die pad for forming a first output-side circuit, and a sealing resin. The first semiconductor element includes a circuit part forming an input-side circuit, and an insulating part that transmits a signal between the input-side and the first output-side circuits, while providing electrical insulation between the input-side and the first output-side circuits. The sealing resin includes first and second side faces spaced apart in an x direction and a third side face perpendicular to a y direction. The conductive support member includes input-side terminals protruding from the first side face and first output-side terminals protruding from the second side face. The conductive support member is not exposed on the third side face.

An electronic device includes an electronic component, a sealing resin, and a lead with an inner portion and an outer portion. The inner portion includes a die pad portion on which the electronic component is mounted, and a connecting portion that connects the outer portion and the die pad portion. The outer portion is disposed on a side of a first direction relative to the die pad portion. The connecting portion is connected to a side surface of the die pad portion. In a second direction, the center of the outer portion is disposed on a side of the second direction relative to the center of the die pad portion. The side surface includes a connecting section connected to the connecting portion and a pair of lateral sections disposed on both sides of the connecting section in the second direction.

Aspects of the subject disclosure may include, for example, system, comprising a substrate having an interconnect in or on a surface of the substrate, a riser disposed over the surface, the riser being configured with one or more through riser vias for coupling to the interconnect, a device positioned over the surface, the device having one or more conductive contacts residing in a plane of the device, and one or more wire bonds coupling the one or more through riser vias with the one or more conductive contacts thereby enabling connectivity of the interconnect to be raised toward or to the plane of the device such that at least one of the one or more wire bonds has a limited physical length. Other embodiments are disclosed.