A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate formed with a semiconductor device so as to cover the semiconductor device, wherein the first bonding layer includes a first metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, wherein the second bonding layer includes a second metal oxide material in an amorphous state; conducting a surface modification process on the first bonding layer and the second bonding layer; bonding the device substrate and the carrier substrate to each other through the first and second bonding layers; and annealing the first and second bonding layers so as to convert the first and second metal oxide materials from the amorphous state to a crystalline state.

A laminated structure includes a cooling member; a circuit board provided on the cooling member and having a through hole; a device provided on the circuit board and including a quantum bit; and a bonding material configured to bond together the circuit board and the device. The bonding material includes a first bonding portion contacting a portion of an upper surface of the cooling member exposed from the through hole, an upper surface of the circuit board, and a lower surface of the device; and a second bonding portion provided around the first bonding portion in plan view and contacting the upper surface of the circuit board and the lower surface of the device. A thermal conductivity of the first bonding portion is higher than that of the second bonding portion. An elastic modulus of the second bonding portion is lower than that of the first bonding portion.

The package-on-package (POP) structure includes a first package unit of three-dimensional fan-out memory chips and a SiP package unit of the two-dimensional fan-out peripheral circuit chip. The first package unit includes: memory chips laminated in a stepped configuration; a molded substrate; wire bonding structures; a first rewiring layer; a first encapsulating layer; and first metal bumps, formed on the first rewiring layer. The SiP package unit includes: a second rewiring layer; a peripheral circuit chip; a third rewiring layer, bonded to the circuit chip; first metal connection pillars; a second encapsulating layer for the circuit chip and the first metal connection pillars; and second metal bumps on the second rewiring layer. The first metal bumps are bonded to the third rewiring layer. Integrating the two package units into the POP is enabled by three rewiring layers and the molded substrate which supports the first package unit during wire bonding process.

The disclosure relates to a display device and an anisotropic conductive film. An anisotropic conductive film disposed between a display panel and a printed circuit board, the anisotropic conductive film including a base resin, a plurality of first conductive balls dispersed in the base resin, each of the plurality of first conductive balls including a core made of a polymer material and at least one metal layer surrounding the core, and a plurality of second conductive balls dispersed in the base resin, each of the plurality of second conductive balls being made of a meltable material, and the anisotropic conductive film having a first area in which the anisotropic conductive film overlaps the first pad electrode and the first lead electrode in a thickness direction of the display device, and a second area as an area disposed between the first lead electrode and the second lead electrode. Each of the metal layer of the first conductive ball and a surface of the second conductive ball are in contact with both the first pad electrode and the first lead electrode.

An electronic system is disclosed. In one example, the electronic system comprises an at least partially electrically conductive carrier, an electronic component, and an intermetallic connection structure connecting the carrier and the component. The intermetallic connection structure comprising an intermetallic mesh structure in a central portion of the intermetallic connection structure, and opposing exterior structures without intermetallic mesh and each arranged between the intermetallic mesh structure and the carrier or the component.