A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a device region and a seal ring region surrounding the device region. The semiconductor device structure includes a seal ring structure over the seal ring region. The seal ring structure surrounds the device region. The semiconductor device structure includes a bonding film over the seal ring structure and the substrate. The semiconductor device structure includes a bonding pad embedded in the bonding film. The bonding pad overlaps the seal ring structure along an axis perpendicular to a first top surface of the substrate, and a second top surface of the bonding pad is substantially level with a third top surface of the bonding film.

A lead frame includes a base comprising a bearing surface for bearing a chip. The bearing surface includes a soldering region, with a solder layer arranged in the soldering region. The solder layer is configured for fixing the chip on the bearing surface. The lead frame includes a groove provided on the bearing surface in a thickness direction of the base. The groove is located outside the soldering region and surrounds at least part of the soldering region along the outer periphery of the soldering region for receiving solder paste overflowed from the soldering region. A depth of the groove is based on a thickness of the base. A packaging structure including the lead frame and a packaging method using the lead frame are also provided.

Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method therefor. The structure includes: a first dielectric layer disposed on a substrate, where the first dielectric layer has a first surface away from the substrate; a first bond pad, passing through the first surface and extending to a first depth below the first surface; a second bond pad, passing through the first surface and extending to a second depth below the first surface, where the second depth is less than the first depth; and a second dielectric layer, disposed on the first surface, where a first gap and a second gap are provided in the second dielectric layer, the first gap exposes the top surface of the first bond pad, and the second gap exposes the top surface of the second bond pad.

A nonvolatile memory device includes first and second semiconductor layers. The first semiconductor layer includes wordlines extending in a first direction, bitlines extending in a second direction, and a memory cell array connected to the wordlines and the bitlines. The second semiconductor layer is beneath the first semiconductor layer in a third direction, and includes a substrate and an address decoder on the substrate. The address decoder controls the memory cell array, and includes pass transistors connected to the wordlines, and drivers control the pass transistors. In the second semiconductor layer, the drivers are arranged by a first layout pattern along the first and second directions, and the pass transistors are arranged by a second layout pattern along the first and second directions. The first layout pattern is different from the second layout pattern, and the first layout pattern is independent of the second layout pattern.

The present disclosure relates to methods, devices, systems, and techniques for managing bonding structures in semiconductor devices. An example semiconductor device includes a first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction. The first semiconductor structure is bonded to the second semiconductor structure through the bonding structure. The bonding structure includes a first group of contact structures, a second group of contact structures, and a dielectric material surrounding the first group of contact structures and the second group of contact structures. A first contact structure of the first group of contact structures is adjacent to a second contact structure of the second group of contact structures along a second direction perpendicular to the first direction. The first contact structure includes a first conductive material. The second contact structure includes the first conductive material and an oxide.