A semiconductor device has a leadframe and a first electrical component disposed over the leadframe. A clip bond is disposed over the first electrical component. The clip bond has a plurality of recesses each having a different depth. A first recess is proximate to a first distal end of the first electrical component, and a second recess is proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component. A depth of the first recess is different from a depth of the second recess. A third recess is over a surface of the first electrical component. A depth of the third recess is different from the depth of the first recess and the depth of the second recess. A second electrical component is disposed over the leadframe. The clip bond extends over the second electrical component.

A semiconductor device, including: a semiconductor chip including an electrode on an upper surface thereof; and a wiring member including a bonding portion, a rising portion, and a connecting portion, the bonding portion being bonded to the electrode via a bonding material, the rising portion being of a shape of a flat plate and extending upward from the bonding portion, the connecting portion connecting the bonding portion to the rising portion. The rising portion includes a lower region connected to the connecting portion and an upper region located above the lower region. Both the lower region and the connecting portion have a first thickness, and the upper region has a second thickness that is larger than the first thickness.

A joint structure includes a first conductor and a second conductor, and a laminated bonding material that is arranged between the first conductor and the second conductor to bond the first conductor to the second conductor. The laminated bonding material includes a first bonding material layer bonded to the first conductor, a second bonding material layer bonded to the second conductor, and an auxiliary conductor plate arranged between the first bonding material layer and the second bonding material layer. The auxiliary conductor plate has a melting point higher than melting points of the first bonding material layer and the second bonding material layer. The second conductor has a laser irradiation mark on a back surface thereof, the back surface being opposite to a front surface of the second conductor that faces the laminated bonding material.

A semiconductor device includes a first lead including a base portion, a semiconductor element mounted on one side in a thickness direction of the base portion and having a first electrode disposed on the one side in the thickness direction and a second electrode disposed on the other side in the thickness direction, a second lead spaced apart from the base portion in a first direction orthogonal to the thickness direction, a first conductive member including a first portion bonded to the first electrode and a second portion bonded to the second lead and electrically connected to the first electrode and the second lead, a first bonding layer interposed between, and bonded to the base portion and the second electrode, and a second bonding layer interposed between, and bonded to the first electrode and the first portion. The first bonding layer includes a sintered metal.

According to one embodiment, a semiconductor device includes the following structure. A semiconductor chip is provided between first and second conductors. A first connector is provided between the semiconductor chip and the second conductor. The second conductor includes a first plate, a second plate, and a third plate, which are continuously provided. The first plate extends in a first direction along a main surface of the semiconductor chip and is connected to the semiconductor chip via the first connector. The second plate extends from the first plate in a direction intersecting the first direction, and includes a first surface continuous from a surface on which the first connector is provided, and includes a groove provided on the first surface. The third plate extends from the second plate in the first direction.

According to one embodiment, a semiconductor device includes the following structure. The semiconductor chip is provided between first and second conductors. A joint component is provided between the chip and the second conductor. The thin film is provided on the second conductor and contains a material different from a material of the joint component. The second conductor includes first, second and third plates. The first plate extends in a first direction along a first surface of the chip and is connected to the chip via the joint component. The second plate extends from the first plate obliquely with respect to the first direction. The third plate extends from the second plate in the first direction. The thin film is arranged on a surface of the second plate continuous from a surface on which the joint component is provided.