A semiconductor device has a leadframe and a first electrical component disposed over the leadframe. A clip bond is disposed over the first electrical component. The clip bond has a plurality of recesses each having a different depth. A first recess is proximate to a first distal end of the first electrical component, and a second recess is proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component. A depth of the first recess is different from a depth of the second recess. A third recess is over a surface of the first electrical component. A depth of the third recess is different from the depth of the first recess and the depth of the second recess. A second electrical component is disposed over the leadframe. The clip bond extends over the second electrical component.

A discrete power semiconductor package includes a semiconductor chip, a heatsink, a first lead, a second lead, and a clip. The heatsink is adjacent the semiconductor chip and draws heat away from the semiconductor chip. The clip binds the semiconductor chip to the heatsink and includes a chip linker, a first terminal, and a second terminal. The chip linker is atop the semiconductor chip. The first terminal connects to the first lead and the second terminal connects to the second lead.

A semiconductor device semiconductor chip mounted to a leadframe that includes an electrically conductive pad. An electrically conductive clip is arranged in a bridge-like position between the semiconductor chip and the electrically conductive pad. The electrically conductive clip is soldered to the semiconductor chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor chip and the electrically conductive pad. The device further includes a pair of complementary positioning formations formed by a cavity in the electrically conductive clip and a protrusion (such as a stud bump or a stack of stud bumps) formed in the electrically conductive pad. The complementary positioning formations are mutually engaged to retain the electrically conductive clip in the bridge-like position to avoid displacement during soldering.

A semiconductor device includes: a first lead including a base portion; a semiconductor element mounted on a first side of the base portion in the thickness direction and including a first electrode; a second lead spaced apart from the base portion in a first direction perpendicular to the thickness direction; a first conductive member electrically bonded to the first electrode and the second lead; and a sealing resin. The first conductive member includes a first portion bonded to the first electrode via a conductive first bonding layer. The first portion includes a first surface and a second surface respectively facing the first side and a second side in the thickness direction. The first portion includes a plurality of first recesses that are recessed from the first surface and a plurality of second recesses that are recessed from the second surface.

A semiconductor device includes a first die pad having a main surface, a second die pad having a second main surface, a first switching element connected to the first main surface, a second switching element connected to the second main surface, a first connecting member connecting the first main surface electrode of the first switching element to the second die pad, an encapsulation resin encapsulating the first switching element, the second switching element, the first die pad, the second die pad, and the first connecting member, and leads projecting out of one of the resin side surfaces of the encapsulation resin.

Provided is a semiconductor module, including: a semiconductor chip; a terminal, configured to extend in a extending direction, and be connected electrically with the semiconductor chip; a sealing resin, configured to seal the semiconductor chip, and cover at least a part of an upper surface of the terminal and at least a part of a lower surface of the terminal; and a lower side resin, configured to extend in the extending direction from the sealing resin, and cover at least a part of the lower surface of the terminal, wherein in the extending direction, a length at which the sealing resin and the lower side resin cover the lower surface of the terminal is greater than a length at which the sealing resin covers the upper surface of the terminal in the extending direction; and wherein the sealing resin and the lower side resin are formed of a same material.

The on-resistance of a semiconductor device is reduced. A package structure composing the semiconductor device includes a die pad, a plurality of leads, a first semiconductor chip having a power transistor and mounted on the die pad, and a second semiconductor chip including a control circuit for controlling the power transistor and mounted on the first semiconductor chip. Here, a source pad of the first semiconductor chip is electrically connected to a first lead and a seventh lead of the plurality of leads via a clip made of a material which is copper as a main component, and the width (and cross-sectional area) of the clip is larger than the width (and diameter) of a wire in plan view.

A semiconductor device includes a first lead including a base portion, a semiconductor element mounted on one side in a thickness direction of the base portion and having a first electrode disposed on the one side in the thickness direction and a second electrode disposed on the other side in the thickness direction, a second lead spaced apart from the base portion in a first direction orthogonal to the thickness direction, a first conductive member including a first portion bonded to the first electrode and a second portion bonded to the second lead and electrically connected to the first electrode and the second lead, a first bonding layer interposed between, and bonded to the base portion and the second electrode, and a second bonding layer interposed between, and bonded to the first electrode and the first portion. The first bonding layer includes a sintered metal.

According to one embodiment, a semiconductor device includes the following structure. A semiconductor chip is provided between first and second conductors. A first connector is provided between the semiconductor chip and the second conductor. The second conductor includes a first plate, a second plate, and a third plate, which are continuously provided. The first plate extends in a first direction along a main surface of the semiconductor chip and is connected to the semiconductor chip via the first connector. The second plate extends from the first plate in a direction intersecting the first direction, and includes a first surface continuous from a surface on which the first connector is provided, and includes a groove provided on the first surface. The third plate extends from the second plate in the first direction.

An object is to provide a technique capable of easily taking out a submodule from a semiconductor device to reuse the submodule. The semiconductor device includes: a submodule in which a conductive plate and a semiconductor element mounted to an upper surface of the conductive plate via a first bonding material are sealed with a first sealing material; an insulating substrate bonded to a lower surface of the submodule via a second bonding material; a case surrounding a periphery of the insulating substrate and the submodule; and a second sealing material sealing a region surrounded by the case so that at least an upper surface of the submodule is exposed.