A hybrid integrated heat spreader suitable for an integrated circuit (IC) die package. The hybrid integrated heat spreader includes a top sheet material and a sealant interface material located where the heat spreader is to contact an assembly substrate. The sealant interface material may offer greater adhesion to a sealant employed between the interface material and the package substrate. In some examples, the sealant interface material has a greater surface roughness and/or a different composition than a surface of the integrated heat spreader that is in close thermal contact with an IC die through a thermal interface material. With the sealant interface material improving adhesion, the sealant may have a higher bulk modulus, enabling the integrated heat spreader to impart greater stiffness to the IC die package assembly.

The present disclosure provides an electronic device including a first electronic unit, a second electronic unit, a circuit layer, a protection layer, and a flexible member. The first electronic unit is electrically connected to the second electronic unit through the circuit layer. The protection layer is disposed corresponding to the first electronic unit and the second electronic unit, and the protection layer has an opening. At least a portion of the flexible member is disposed in the opening. The protection layer has a first Young's modulus, the flexible member has a second Young's modulus, and the first Young's modulus is greater than the second Young's modulus.

A chip on film package according to one embodiment of the present disclosure includes: a base film; a wiring unit located on the base film; a semiconductor chip mounted on the wiring unit; a first heat dissipation unit configured to come into contact with the semiconductor chip; a second heat dissipation unit configured to come into contact with the first heat dissipation unit, and comprise a metal; and an adhesive unit configured to attach the base film on which the wiring unit is located and the semiconductor chip is mounted to the second heat dissipation unit with the first heat dissipation unit therebetween.

Provided is a package structure including a first tier, a second tier, and a cladding layer. The first tier has a first surface and a second surface opposite to each other. The second tier is bonded to the second surface of the first tier by a plurality of conductive connectors. The cladding layer is disposed between the first tier and the second tier. The cladding layer has inner sidewalls to define a groove for accommodating the plurality of conductive connectors, and the inner sidewalls are inclined sidewalls.

A sensor package structure and a manufacturing method thereof are provided. The sensor package structure includes a substrate, a fixing adhesive layer disposed on the substrate, a sensor chip adhered to the fixing adhesive layer, an annular adhering layer disposed on the sensor chip, a light-permeable sheet adhered to the annular adhering layer, and a plurality of metal wires that are electrically coupled to the substrate and the sensor chip. The size of the light-permeable sheet is smaller than that of the sensor chip.

Disclosed herein are microelectronic assemblies, as well as related apparatuses and methods. In some embodiments, a microelectronic assembly may include a substrate; a lid surrounding an individual die, wherein the lid includes a planar portion and two or more sides extending from the planar portion, and wherein the individual die is electrically coupled to the substrate by interconnects; and a material surrounding the interconnects and coupling the two or more sides of the lid to the substrate.

A semiconductor package includes a circuit board, an interposer structure on the circuit board, a first semiconductor chip and a second semiconductor chip on the interposer structure, the first and the second semiconductor chips electrically connected to the interposer structure and spaced apart from each other, and a mold layer between the first and second semiconductor chips, the mold layer separating the first and second semiconductor chips. A slope of a side wall of the mold layer is constant as the side wall extends away from an upper side of the interposer structure, and an angle defined by a bottom side of the mold layer and the side wall of the mold layer is less than or equal to ninety degrees.

To manufacture a semiconductor device, a first heat treatment for curing a first adhesive material of a conductive paste type is performed, after a semiconductor chip is mounted on a die pad of a lead frame via the first adhesive material. After that, a metal plate is disposed on a pad of the semiconductor chip such that the metal plate faces the pad of the semiconductor chip via a second adhesive material of a conductive paste type, and a second heat treatment is performed for curing each of the first adhesive material and the second adhesive material. A time of the first heat treatment is less than a time of the second heat treatment. After the first adhesive material is cured by the first heat treatment, the first adhesive material is further cured by the second heat treatment.

Provided are an electronic package and a manufacturing method thereof. A groove is formed in a carrier structure, and a circuit structure is disposed in the groove. Therefore, chips with different specifications can be used as a first electronic component and a second electronic component electrically connected to the carrier structure and the circuit structure, respectively, thereby multi-functional requirements can be met.

A lead-free low-melting glass composition containing vanadium oxide, tellurium oxide, silver oxide and lithium oxide, said composition satisfying the following two relational expressions (1) and (2) in terms of oxides.
[Ag.sub.2O][TeO.sub.2][V.sub.2O.sub.5][Li.sub.2O](1)
2[V.sub.2O.sub.5][Ag.sub.2O]+[Li.sub.2O]40(2)
(In the formula, [X] represents a content of component X, and the unit thereof is mol %; the same applies hereinafter.) Thus, it is possible to provide a lead-free low-melting glass composition which enables sealing and adhesion at around the melting point (232 C.) of tin and which has high adhesiveness and stickiness.