A substrate processing system includes: a batch-type processing part that collectively processes a lot including substrates arranged at a first pitch; a single-substrate-type processing part that processes the substrates of the lot one by one; and an interface part that delivers the substrates between the batch-type processing part and the single-substrate-type processing part. The batch-type processing part includes a processing bath that stores a processing solution having a lump shape or a mist shape, a first holder that holds the substrates arranged at the first pitch, and a second holder that receives the substrates arranged at a second pitch from the first holder in the processing solution. The interface part includes a transfer part that transfers the substrates held separately by the first and second holders in the processing solution, from the batch-type processing part to the single-substrate-type processing part.

A substrate processing method includes supplying a first developer at a first temperature onto a substrate in a development device, thereby performing a development process, supplying a process fluid at a second temperature lower than the first temperature onto the substrate, thereby replacing a residue of the first developer remaining after the development process with a second developer, transferring the substrate from the development device to a supercritical drying device, and supplying, by the supercritical drying device, at least one of a supercritical fluid and a subcritical fluid onto the substrate, thereby drying the second developer.

A wafer drying apparatus is disclosed. The wafer drying apparatus may include a drying chamber housing providing a drying space, in which a wafer is disposed, a supercritical fluid supplying part configured to supply a supercritical fluid into the drying space, a wafer heating part configured to heat the wafer disposed in the drying space, and a wafer cooling part configured to cool the wafer disposed in the drying space. The wafer cooling part may include a cooling plate disposed below a place, on which the wafer is loaded, and a cooling conduit inserted in the cooling plate.

The present invention relates to an apparatus for processing supercritical substrate comprising: a chamber having a processing space; a substrate supporting unit for supporting a substrate; an opening/closing unit for opening or closing the processing space; a loading/unloading unit for loading a substrate into or unloading the substrate from the substrate supporting unit; a detection unit for detecting the loading/unloading unit or the substrate; and a control unit for controlling the opening/closing unit, wherein the control unit controls the operation of the opening/closing unit in response to the detection unit detecting the loading/unloading unit or the substrate.

Provided is a method of processing a substrate, the method including: a pressure increasing operation of increasing a pressure of a treatment space to a first set pressure after the substrate is loaded into the treatment space; after the pressure increasing operation, a treating operation of processing the substrate; and after the treating operation, a pressure reducing operation of reducing a pressure of the treatment space, in which the pressure increasing operation includes increasing a pressure of the treatment space by supplying only a supercritical fluid between the supercritical fluid and the organic solvent to the treatment space, and the treating operation includes supplying a mixed fluid obtained by dissolving the organic solvent in the supercritical fluid to the treatment space.

An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.

A method for processing a substrate, for processing a surface of a substrate having projections/depressions formed on the surface, the method having: a rinsing step S101 of rinsing the surface of the substrate with a rinsing solution containing water; a chemical solution replacement step S102 of bringing a chemical solution into contact with the surface of the substrate that has been rinsed, to replace a liquid adhering to the surface of the substrate from the rinsing solution to the chemical solution; a state change step S103 of raising a temperature of the substrate wetted with the chemical solution to a temperature equal to or higher than the critical temperature of the chemical solution to allow the chemical solution to reach a supercritical state; and a removing step S104 of removing the chemical solution in the supercritical state from the surface of the substrate, in which the chemical solution contains an organic solvent (S1) (excluding, however, organic solvents having a fluorine atom) having a higher specific gravity than water.

A substrate processing apparatus includes: a processing container; a holder holding a substrate horizontally; and a fluid supplier supplying a processing fluid from a side of the processing container, wherein, when the substrate is held, a first distance between a first virtual plane, including an upper surface of the substrate, and a ceiling surface of the processing container is different from a second distance between a second virtual plane, including a lower surface of the substrate, and a bottom surface of the processing container, wherein the fluid supplier includes a nozzle changing a flow of the processing fluid and including first and second dischargers discharging first and second discharge amounts of the processing fluid respectively from positions above the first virtual plane and below the second virtual plane, and a magnitude relationship between the first and second discharge amounts corresponds to a magnitude relationship between the first and second distances.