A computer-implemented method for enabling a feature of a semiconductor device can include receiving, by at least one processor of a semiconductor device, a command to enable a feature of the semiconductor device. The method can also include burning, by the at least one processor and in response to the command, an electronic fuse of the semiconductor device. Various other methods, systems, and computer-readable media are also disclosed.

A probe card for testing or trimming or programming a semiconductor wafer including a first die including a first integrated circuit having a trimmable or programmable component. The probe card including at least one probe arranged to make electrical contact with at least one probe pad arranged on the wafer. The at least one probe pad being electrically connected to the trimmable or programmable component and being arranged in a saw street of the wafer.

The present disclosure relates to semiconductor structures and, more particularly, to e-fuse structures and methods of manufacture. The structure includes: a silicided fuse structure which includes a narrow portion and wider, end portions; dummy structures on opposing sides of the silicided fuse structure; and sidewall spacer material separating the dummy structures from the silicided fuse structure.

A memory device is disclosed. The memory device includes a transistor. The memory device includes a resistor electrically coupled to the transistor, the transistor and the resistor forming an electrical fuse (eFuse) memory cell. The memory device includes a plurality of interconnect structures formed over a source/drain structure of the transistor. The memory device includes a plurality of via structures formed over the source/drain structure of the transistor. The resistor is disposed between the source/drain structure of the transistor and a topmost one of the plurality of interconnect structures. The resistor is formed of titanium nitride (TiN).

An electronic fuse device includes a substrate, an insulating layer on the substrate, a first fuse gate, a first pass gate, and a first readout electrode. The substrate includes a first doping region, a second doping region, and a third doping region having a first conductivity type, and a highly doped region having a second conductivity type different from the first conductivity type. The first doping region is between the second doping region and the highly doped region. The second doping region is between the first doping region and the third doping region. The first fuse gate is on the insulating layer and between the first doping region and the second doping region. The first pass gate is on the insulating layer and between the second doping region and the third doping region. The first readout electrode is electrically connected to the third doping region.

In one example, an apparatus comprises: a first switch and a second switch coupled between a fuse terminal and a ground terminal, the first switch having a first switch control terminal, the second switch having a second switch control terminal; and a driver circuit having a control input, a first control output, and a second control output, the control input coupled to the fuse terminal, the first control output coupled to the first switch control terminal, and the second control output coupled to the second switch control terminal.

The present application discloses an electronic fuse storage unit and a storage array thereof, the electronic fuse storage unit has a control transistor and a fuse that are formed in a same active area, an elongated-shape polycrystalline silicon fuse thereof is located at a side of an MOS control transistor and has an end shorted to an end of a drain-side heavily doped region of a nearest MOS control transistor, the area of the electronic fuse storage unit is significantly reduced and it is facilitated to directly perform a combination layout by forming storage unit pairs in a center-symmetric manner to form a storage unit array, and thus, a layout area of a storage array can be reduced to obviously increase the layout efficiency for composing the storage array by the electronic fuse storage unit.