A semiconductor packaging device includes a packaging module, a heat dissipation cover and a thermal interface material layer. The package module includes a substrate, and a working chip mounted on the substrate. The heat dissipation cover includes a metal cover fixed on the substrate and covering the working chip, an accommodating recess located on the metal cover to accommodate the working chip, and a plurality of protrusive columns respectively formed on the metal cover and distributed within the accommodating recess at intervals. The depth of the accommodating recess is greater than the height of each protrusive column, and the accommodating recess is greater than the working chip. The thermal interface material layer is non-solid, and located within the accommodating recess between the protrusive columns to wrap the protrusive columns and contact with the working chip, the metal cover and the protrusive columns.

A semiconductor device includes a wiring substrate having an upper surface, a semiconductor chip mounted on the wiring substrate, and a stiffener ring fixed onto the wiring substrate via a plurality of adhesive layers. The upper surface is a quadrangular shape, and first and second center lines and first and second diagonal lines can be drawn. The stiffener ring has four extension portions and four corner portions. Adhesive layers include first, second, third and fourth adhesive layers that respectively overlap with the four extension portions and that are arranged at a portion overlapping with one of the first center line and the second center line. Also the adhesive layers include fifth, sixth, seventh, and eighth adhesive layers that respectively overlap with the four corner portions and that are arranged at a portion overlapping with one of the first diagonal line and the second diagonal line.

Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.

A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

In an embodiment, a package including: a redistribution structure including a first dielectric layer and a first conductive element disposed in the first dielectric layer; a first semiconductor device bonded to the redistribution structure, wherein the first semiconductor device includes a first corner; and an underfill disposed over the redistribution structure and including a first protrusion extending into the first dielectric layer of the redistribution structure, wherein the first protrusion of the underfill overlaps the first corner of the first semiconductor device in a plan view.

An integrated circuit (IC) chip includes transmit circuitry comprising multiple transmitters to launch multiple sets of signals on-chip in a phase-aligned relationship to on-chip clocked-device circuitry. A first signaling path includes a first delay circuit to dynamically delay a first set of the multiple sets of signals by a first delay that is based on a phase difference between a reference clock and an as-received version of the first set of the multiple sets of signals fed back from the on-chip clocked-device circuitry. A second signaling path is disposed in parallel with the first signaling path and includes a second delay circuit to dynamically delay a second set of the multiple sets of signals by a second delay and is based on a phase difference between the reference clock and an as-received version of the second set of the multiple sets of signals fed back from the on-chip clocked-device circuitry.

Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.

A package structure includes a first dielectric layer disposed on a first patterned circuit layer, a first conductive via in the first dielectric layer and electrically connected to the first patterned circuit layer, a circuit layer on the first dielectric layer, a second dielectric layer on the first dielectric layer and covering the circuit layer, a second patterned circuit layer on the second dielectric layer and including conductive features, a chip on the conductive features, and a molding layer disposed on the second dielectric layer and encapsulating the chip. The circuit layer includes a plurality of portions separated from each other and including a first portion and a second portion. The number of pads corresponding to the first portion is different from that of pads corresponding to the second portion. An orthographic projection of each portion overlaps orthographic projections of at least two of the conductive features.

A semiconductor package includes a redistribution layer including, a first insulating layer including a first trench, a first conductive layer including a first conductive region extending along a top surface of the first insulating layer and a second conductive region disposed inside the first trench, a second insulating layer on the first conductive layer and the first insulating layer, the second insulating layer including a second trench at least partially overlapping the first trench, the second trench exposing a part of the first conductive region and a second conductive layer including a third conductive region extending along a top surface of the second insulating layer and a fourth conductive region disposed on the second conductive region inside a via trench including sidewalls of the first trench and the second trench, and wherein the second and fourth conductive regions have a width in a range of 20 m to 600 m.

Embodiments include packages and methods for forming packages which include interposers having a substrate made of a dielectric material. The interposers may also include a redistribution structure over the substrate which includes metallization patterns which are stitched together in a patterning process which includes multiple lateral overlapping patterning exposures.